ROW: (Research Initiation) Modeling and Simulation of ChargeTransport in InP-Lattice Matched Materials and Device Structures

非稳态和瞬态输运效应预计将发挥 决定超小型电子产品性能的关键作用 装置. 这对于由III-V族材料制造的结构尤其如此 化合物和合金材料。 在这种情况下，承运人运输的性质 结构需要使用复杂的建模和仿真 描述和预测实验观察结果的技术 和设备性能。 我们将通过以下方式解决这些建模挑战： 开发一个力矩方程模拟工具， 改进了我们现有的Monte Carlo代码。 一个主要目标， 这项研究的贡献将是开发一种有效的 两种模拟方法的耦合技术。 细节 适当和兼容的边界条件的性质将是 探讨了 我们亦会详细评估有关建议的有效性， 力矩方程法在超小型器件中的应用 仿真 我们的目标材料系统将是In（x）Ga（1-x）As， In（x）Al（1-x）As和InP，因为增加的技术性能而被选择。 这些材料在光电子通信中的重要性 系统. 为了充分运用这些模拟工具，我们将 将我们的注意力集中在一个具有两个小几何形状的设备上， 和大的，快速变化的领域，异质结双极 晶体管或HBT。 我们的工作将使人们更好地了解 HBT器件物理特性和具有更高截止电压的新器件设计 频率. 这些设计将利用传输现象 使用新的模拟工具进行研究。 协调执行 蒙特卡罗和力矩方程工具的使用以及 在设备内容中的力矩方程方法将加速 开发有用和有效的模拟工具， 设备设计 这一模拟工作还将提供必要的 我们未来的载体实验研究的背景 在HBT相关结构中的运输。

Non-stationary and transient transport effects are expected to play crucial roles in determining the performance of ultra-small electronic devices. This is especially true for structures fabricated of III-V compound and alloy materials. The nature of carrier transport in such structures demands the use of sophisticated modeling and simulation techniques in order to describe and predict experimental observations and device performance. We will address these modeling challenges by developing a moment-equation simulation tool as well as making enhancements in our existing Monte Carlo code. A prime objective and contribution of this research will be the development of an efficient coupling technique for the two simulation approaches. Details of the nature of suitable and compatible boundary conditions will be explored. We will also make a detailed assessment of the validity and utility of the moment-equation approach for ultra-small device simulation. Our target material systems will be In(x)Ga(1-x)As, In(x)Al(l-x)As, and InP, chosen because of the increased technological importance of these materials in opto-electronic communication systems. In order to fully exercise these simulation tools, we will focus our attention on a device characterized by both small geometries and large, rapidly varying fields, the heterojunction bipolar transistor or HBT. Our work will lead to an improved understanding of HBT device physics and new device designs exhibiting higher cut-off frequencies. These designs will exploit the transport phenomena studied with the new simulation tools. The coordinated implementation of the Monte Carlo and moment-equation tools and the assessment of the moment-equation approach in a device content will hasten the development of useful and efficient simulation tools suitable for device design. This simulation effort will also provide the necessary background for our future experimental investigations of carrier transport in HBT-related structures.