A Novel Large Area Microwave Source for Diamond Thin Film Deposition
A Novel Large Area Microwave Source for Diamond Thin Film Deposition
批准号:
9060584
负责人:
Barton Lane
金额:
$5.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1991
资助国家:
美国
项目状态:
已结题
起止时间:
1991-01-01 至 1991-09-30
中文摘要
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英文摘要
The objective of the proposed program is to develop a prototype of a novel large area, thin film, microwave diamond deposition reactor. Present microwave reactors for the deposition of thin diamond and diamond-like films from the gas phase are limited to small diameters, typically 2-3". The possibility of achieving larger area thin films would open new possibilities for these coatings which possess unique corrosion, chemical, electrical, optical and hardness properties. There are direct commercial applications for such films in a variety of markets. The proposed reactor design exploits the physics of microwave plasma formation to generate a spatially uniform flux of chemically excited process gas to the substrate on which the thin film is grown. In order to attain this uniform flow, however, neutral gas fluid flows, plasma generation and microwave coupling must be carefully modeled in order to provide design tools with which to refine initial proof of principle prototypes. In Phase I these modeling tools would be developed and a prototype design working drawings created. In Phase II, the prototype would be built and optimized.
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Novel Toroidal Electron Cyclotron Resonance Reactor for Semiconductor Materials Processing
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批准号:9160132
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项目类别:Standard Grant
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资助金额:$5.0万
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财政年份:1992
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负责人:Barton Lane
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依托单位:
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