Novel Toroidal Electron Cyclotron Resonance Reactor for Semiconductor Materials Processing

提出了一种用于干刻蚀和沉积的新型电子回旋共振（ECR）反应器的研究方案。环形ECR反应器（TECR）采用独特的磁性几何结构，具有巨大的潜在优势；(1)大大减少晶圆暴露于高能光子辐射和相关的晶圆加热；(2)在8英寸晶圆上的蚀刻均匀性，同时保持与传统ECR源相当的蚀刻速率（约为1微米/分钟）。(3)将离子组成与击中晶圆的中性组成分离的能力，以及(4)非常定向的离子通量，减少了亚微米特征蚀刻中的图案依赖性。该设计通过利用磁力线引导电子和离子向晶圆的传输，使辉光放电与晶圆分离。晶圆上的蚀刻均匀性可以通过微调螺线管磁场来调节，从而可以独立于工艺化学和放电动力学进行控制。在第一阶段，将建立反应堆的基本物理模型，设计原型反应堆并绘制工程图纸。

A research program for a novel electron cyclotron resonance (ECR) reactor for dry etching and deposition is proposed. The toroidal ECR reactor (TECR) uses a unique magnetic geometry which offers great potential benefits; (1) greatly reduced exposure of the wafer to high- energy photon radiation and associated wafer heating, (2) uniformity of etching over 8-inch wafers while maintaining etching rates which are comparable to conventional ECR sources (on the order of 1 micron/minute. (3) the ability to separate the ion composition from that of the neutral composition striking the wafer, and (4) very directional ion fluxes that reduce pattern dependencies in the etching of submicron features. The design permits the separation of the glow discharge from the wafer by using magnetic field lines to guide the transport of electrons and ions to the wafer. The etching uniformity across the wafer can be adjusted by trimming the solenoidal magnetic field, and thus, can be controlled independently of the process chemistry and discharge kinetics. In Phase I, the basic physics of the reactor will be modelled, a prototype reactor be designed and engineering drawings produced.