Surface Chemistry of Germanium Organometallics

锗有机金属的表面化学

• 批准号: 9100429
• 负责人: Charles Greenlief
• 金额: $ 22.45万
• 依托单位: University of Missouri-Columbia
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-06-01 至 1994-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9100429&HistoricalAwards=false
• 关键词: Surface; Chemistry; Germanium; Organometallics

Organometallic vapor phase epitaxy will be used to generate germanium films on a silicon substrate leading to silicon-germanium alloy and heterostructure formation. The films will be produced as ultra-thin (1-10 atomic layer) structures as a means to engineering the electronic properties of the desired interfaces. Interactions of the films with the silicon substrate will be investigated using SIMS, UPS and XPS surface science techniques. These studies are aimed at a mechanistic understanding of the surface processes involved in the deposition of epitaxial germanium films. %%% The research, in the general area of Analytical and Surface Chemistry, focuses on the formation of ultra-thin germanium films on silicon, leading to silicon-germanium alloys. The results of the research promise to improve our general understanding of these alloys which have considerable potential in integrated optoelectonic devices, transistors and thin film capacitors.

有机物气相外延将用于产生 在硅衬底上形成锗膜， 硅锗合金和异质结构形成。 的 薄膜将被制成超薄（1-10个原子层） 结构作为一种手段来工程的电子性能 所需的接口。 电影与 利用西姆斯、UPS和XPS对硅衬底进行了研究 表面科学技术 这些研究旨在 机械理解的表面过程所涉及的 外延锗膜的沉积。 %%% 在分析和曲面的一般领域， 化学，着重于超薄锗的形成 硅上的薄膜，导致硅锗合金。 的 研究结果有望改善我们的总体状况。 了解这些具有相当大潜力的合金 在集成光电子器件、晶体管和薄膜 电容器.