Chemical Vapor Disposition Under Kinetic Control: A Contribution to the Development of New Precursors and the Elucidation of Film Growth Mechanisms

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This collaborative award, made under the Materials Chemistry and Chemical Processing Initiative is supported by the Divisions of Chemistry, Materials Research, and Chemical and Thermal Systems. New precursors will be prepared that will participate in the chemical vapor deposition of high-performance semiconductors and ceramic materials under kinetic control. Intermediates in chemical vapor deposition and vapor phase epitaxy will be identified and their reactivity will be correlated with film growth. Mechanisms of film growth will also be studied. A novel reactor system will be employed permitting new approaches to the identification, and spatial and temporal monitoring of species formed upon thermal decomposition of gaseous precursor molecules at solid surfaces. %%% Reactive intermediates formed from precursors used in established vapor deposition and vapor-phase epitaxy processes are largely unknown. Identifying them and monitoring their reaction rates will contribute to more effective process control and also extend to the deposition of entirely new materials.