Acquisition of Instrumentation for III-V/II-VI Heterovalent Molecular Beam Epitaxy

购置 III-V/II-VI 异价分子束外延仪器

• 批准号: 9111781
• 负责人: Jacek Furdyna
• 金额: $ 32.22万
• 依托单位: University of Notre Dame
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-08-01 至 1993-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9111781&HistoricalAwards=false
• 关键词: Acquisition; Instrumentation; III; II; VI

Funds are requested for setting up a hybrid molecular beam epitaxy (MBE) system consisting of two growth chambers, with an ultrahigh vacuum channel for transporting wafers from one chamber to the other. Specifically, this proposal requests funds for a second MBE growth chamber for III-V layers, and a transfer channel, which will be added on to an existing MBE growth chamber for II-VI compounds and alloys. The individual growth chambers will be devoted to epitaxy and doping of III-V and of II-VI semiconductor compounds. The UHV transport channel will permit epitaxial deposition of II-VI layers and heterostructures directly on III-V epilayers. The research program includes studies of the interface to understand mechanisms which determine nucleation of heterovalent growth; studies of II-VI material growth on III-V epilayer alloy substrates and lattice matching for particular II-VI compounds or short-period superlattices; exploration of injection of carriers in heterovalent heterojunctions from the III-V into the II-VI region; and exploration of the magnetic proximity effects which may occur at the interface of a III-V material with a II-VI based diluted magnetic semiconductor (DMS) as a result of electron wavefunction penetration from the III-V into the DMS region. Structural, optical, electronic, and neutron scattering studies on the proposed materials will be conducted. About 8 grad students, 2 undergrad students, and 1 post-doc will be directly involved in the program. The instrumentation is to be maintained and operated by the university and the research group. The university is providing significant matching funds (48%).

建立混合分子束外延(MBE)系统需要资金，该系统由两个生长室组成，其中有一个超高真空通道用于将晶片从一个室输送到另一个室。具体地说，该提案要求为第二个用于III-V层的分子束外延生长室和一个传输通道提供资金，该通道将被添加到现有的用于II-VI化合物和合金的分子束外延生长室。单独的生长室将专门用于III-V和II-VI半导体化合物的外延和掺杂。UHV传输通道将允许在III-V外延层上直接外延沉积II-VI层和异质结构。研究计划包括界面研究，以了解决定异价生长成核的机制；研究II-VI材料在III-V外延层合金衬底上的生长和特定II-VI化合物或短周期超晶格的晶格匹配；探索将载流子从III-V异质结注入II-VI区；以及探索由于电子波函数从III-V渗透到DMS区域而可能在III-V材料与基于II-VI的稀磁半导体(DMS)的界面处发生的磁邻近效应。将对建议的材料进行结构、光学、电子和中子散射研究。大约8名研究生、2名本科生和1名博士后将直接参与该项目。仪器将由大学和研究小组进行维护和操作。该大学提供了大量的配套资金(48%)。