Far-infrared Studies of Compound Semiconductors

化合物半导体的远红外研究

• 批准号: 8904802
• 负责人: Jacek Furdyna
• 金额: $ 21.46万
• 依托单位: University of Notre Dame
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-05-15 至 1993-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8904802&HistoricalAwards=false
• 关键词: Far; infrared; Studies; Compound; Semiconductors

This proposal describes a program of far-infrared (FIR) magnetospectroscopic studies of compound semiconductors, with strong emphasis on layered structures of II-VI compounds and their ternary alloys, including diluted magnetic semiconductors (DMS). There will be four areas of investigations. First, they will employ FIR magnetooptical techniques to study impurity levels of doped epilayers of wide gap II-VI semiconductor compounds and their ternary alloys prepared by molecular beam epitaxy (MBE) and by atomic layer epitaxy (ALE). The focus will be on hydrogenic donor levels, whose characteristic energies (1s - 2p transition, ionization energy, spin splitting in DMS alloys, etc.) correspond to the FIR energy range. Second, they propose to apply these same techniques to the study of impurities in doped II-VI based superlattices and quantum wells, where the impurity levels depend on the quantum well geometry and on impurity distribution. Third, they will use FIR magnetospectroscopy to study quantum wells, superlattices, and interfaces involving narrow gap semiconductors. Fourth, they will investigate antiferromagnetic resonance in manganese based diluted magnetic semiconductors, where such studies can provide definitive information on dynamical spin processes. One of the strengths of the proposed program is that many of the layered structures to be investigated - as well as bulk samples - can be prepared in their own materials preparation laboratory, either by MBE or (in the case of samples for the antiferromagnetic resonance studies) by conventional crystal growth techniques.

本方案介绍了一种远红外（FIR） 化合物半导体的磁谱研究， 着重强调II-VI化合物的层状结构， 它们的三元合金，包括稀磁半导体 （DMS）。 将有四个调查领域。 一是 将采用FIR磁光技术来研究杂质 宽禁带II-VI族半导体的掺杂外延层的能级 分子束制备化合物及其三元合金 外延（MBE）和原子层外延（ALE）。 重点将 在类氢施主能级上，其特征能量（1 s - 2 p跃迁，电离能，DMS合金中的自旋分裂， 等等）。对应于FIR能量范围。 其次，他们建议 将同样的技术应用于杂质的研究， 掺杂的II-VI基超晶格和量子威尔斯，其中 杂质水平取决于量子阱的几何形状 杂质分布 第三，使用FIR 磁谱学研究量子威尔斯，超晶格， 涉及窄间隙半导体的界面。 四是 将研究锰基的反铁磁共振 稀磁半导体，这些研究可以提供 关于动态自旋过程的决定性信息。 之一 该计划的优点是，许多分层的 要研究的结构-以及散装样品-可以 在他们自己的材料制备实验室中制备， MBE或（在反铁磁性样品的情况下） 共振研究）。