Semiconductor Quantum Electron Wave Devices

半导体量子电子波器件

• 批准号: 9111866
• 负责人: Thomas Gaylord
• 金额: $ 32.5万
• 依托单位: Georgia Tech Research Corporation
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-09-01 至 1996-02-29
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9111866&HistoricalAwards=false
• 关键词: Semiconductor; Quantum; Electron; Wave; Devices

New types of semiconductor device structures based on the quantitative analogies between ballistic (collisionless) transport in semiconductors and electromagnetic propagation in dielectrics are being investigated. With electron energies such that propagation is above all conduction band edges (as opposed to below the barrier tunneling), these structures exhibit electron wave optical effects including reflection, refraction, diffraction, and interference. Theoretical and experimental research is being conducted on the resulting electron waveguides, negative resistance devices, tunable filters, tunable emitters, interference diodes, and interference transistors for future integrated circuits of higher speeds and higher levels of integration.

基于半导体中的弹道（无碰撞）输运和电介质中的电磁传播之间的定量类比，正在研究新型半导体器件结构。随着电子能量的传播在所有导带边缘之上（而不是在势垒隧穿之下），这些结构表现出包括反射、折射、衍射和干涉在内的电子波光学效应。理论和实验研究正在进行由此产生的电子波导、负电阻器件、可调谐滤波器、可调谐发射器、干扰二极管和干扰晶体管，以实现未来更高速度和更高集成度的集成电路。