Correlated Electron Transport in One-dimensional Channels

一维通道中的相关电子传输

• 批准号: 9117341
• 负责人: Leonid Glazman
• 金额: $ 18.3万
• 依托单位: University of Minnesota-Twin Cities
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-02-01 至 1995-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9117341&HistoricalAwards=false
• 关键词: Correlated; Electron; Transport; dimensional; Channels

Correlated Electron Transport in One-Dimensional Channels - The object of this project is to build a theoretical structure within which to treat quantum transport for a system with interacting electrons, in particular for narrow channels formed in gated semiconductor heterostructures. Coulomb repulsion between electrons becomes crucially important at low electron density, resulting in long-range interactions and correlated states. Two models for a strongly correlated system of electrons will be investigated. In the first model fluctuations of the electrostatic potential that forms the channel within the inversion layer is taken as much smaller than the electron-electron interaction. The second model will take account of strong fluctuations in the potential and the resulting formation of almost isolated quantum dots. These models will be compared with experimental results. %%% Recent progress in fabrication of semiconductor structures, including electron beam lithography and MBE growth on vicinal surfaces, has allowed the systematic experimental study of quantum transport on submicron length scales. Existing theories accurately describe the case where the electrons in a narrow channel move with very little scattering, and the opposite case where the electrons are frozen tightly in place. There is, however and intermediate regime where a single sample can be changed from a metal to an insulator simply by changing the electron density. This much more interesting regime cannot be treated using conventional models, because they do not include electron-electron interactions properly. This research project proposes to develop models for this intermediate transition regime. Such understanding is quite important, as this class of effects have been proposed as the basis for the next generation of ultra-small electronic devices.

一维通道中的相关电子输运 该项目的目的是建立一个理论结构， 它处理一个系统的量子输运， 电子，特别是用于在栅控中形成的窄沟道， 半导体异质结构 库仑斥力 电子在低电子密度下变得至关重要， 导致长程相互作用和相关状态。 两 强关联电子系统的模型将是 研究了 在第一个模型中， 在反型层内形成沟道的电势是 比电子-电子相互作用小得多。 的 第二个模型将考虑到强烈的波动， 势和由此形成的几乎孤立的量子 点。 这些模型将与实验结果进行比较。 %%% 半导体结构制造的最新进展， 包括电子束光刻和MBE生长 表面，已经允许系统的实验研究量子 在亚微米尺度上传输。 现有理论准确 描述的情况下，电子在一个狭窄的通道移动， 几乎没有散射，相反的情况是， 被紧紧地冻结在原地。 然而，中间 一个单一的样品可以从金属变成 通过改变电子密度就可以改变绝缘体。 这个更 不能使用常规模型处理感兴趣的状态， 因为它们不包括电子-电子相互作用 正常 该研究项目建议开发模型， 这中间过渡制度。 这样的理解是相当 重要的是，这类效应已被提议作为基础 用于下一代超小型电子设备。