Geometric and Electronic Structure and Vibrational Properties of Metal-Semiconductor Interface Systems

金属-半导体界面系统的几何和电子结构以及振动特性

• 批准号: 9120398
• 负责人: William Graham
• 金额: --
• 依托单位: University of Pennsylvania
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-07-01 至 1995-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9120398&HistoricalAwards=false
• 关键词: Geometric; Electronic; Structure; Vibrational; Properties

Fundamental research directed toward improved understanding and interrelationships of the atomic structural, electronic and vibrational properties of metal-semiconductor interfaces will be conducted The PI is recognized as a pioneer in the imple- mentation of MEIS for surface analysis, and the proposed program brings together an impressive array of advanced surface analysis techniques to assist in the fundamental studies proposed. The research aims to understand the correlation between Schottky barrier behavior and general metal-semiconductor interface atomic level structure and electronic properties. %%% This research is expected to provide deeper fundamental understanding of metal-semiconductor interfaces and their relationship to Schottky barrier behavior in terms of barrier height and homogeneity. From an application point of view, understanding these properties is helpful to semiconductor device design and fabrication. The results will be of importance in a general way to the technology of large scale, high speed integrated electronic circuits.

基础研究旨在提高认识， 原子结构、电子和 金属-半导体界面的振动特性将是 进行 PI被公认为是简单的先驱- MEIS的表面分析，并提出了程序 汇集了一系列令人印象深刻的先进表面分析 技术，以协助提出的基础研究。的 研究旨在了解肖特基之间的相关性， 势垒行为和一般金属-半导体界面原子 能级结构和电子性质。 %%% 这项研究有望提供更深入的基础知识。 了解金属-半导体界面及其 在势垒方面与肖特基势垒行为的关系 高度和均匀性。 从应用的角度来看， 了解这些性质有助于半导体器件的研究 设计和制造。 结果将是重要的， 大规模、高速度技术的通用途径 集成电子电路