Geometric and Electronic Structure and Vibrational Properties of Metal-Semiconductor Interface Systems

将进行基础研究，以提高对金属-半导体界面的原子结构，电子和振动特性的理解和相互关系。PI被认为是将MEIS用于表面分析的先驱。该计划汇集了一系列令人印象深刻的先进表面分析技术，以协助提出的基础研究。本研究旨在了解肖特基势垒行为与一般金属-半导体界面原子能级结构和电子性质之间的关系。这项研究有望对金属-半导体界面及其在势垒高度和均匀性方面与肖特基势垒行为的关系提供更深入的基本理解。从应用的角度来看，了解这些特性有助于半导体器件的设计和制造。研究结果对大规模、高速集成电路技术具有普遍意义。

Fundamental research directed toward improved understanding and interrelationships of the atomic structural, electronic and vibrational properties of metal-semiconductor interfaces will be conducted The PI is recognized as a pioneer in the imple- mentation of MEIS for surface analysis, and the proposed program brings together an impressive array of advanced surface analysis techniques to assist in the fundamental studies proposed. The research aims to understand the correlation between Schottky barrier behavior and general metal-semiconductor interface atomic level structure and electronic properties. %%% This research is expected to provide deeper fundamental understanding of metal-semiconductor interfaces and their relationship to Schottky barrier behavior in terms of barrier height and homogeneity. From an application point of view, understanding these properties is helpful to semiconductor device design and fabrication. The results will be of importance in a general way to the technology of large scale, high speed integrated electronic circuits.