Cryogenic Processing of Schottky Contacts to III-V Semiconductors

高势垒高度，低漏电流 与III-V半导体的肖特基接触是 对场效应应用很重要 晶体管、光学传感器和光伏 转换器。 III-V肖特基接触 半导体将被低温处理 (CP)大大增加势垒高度， 减少漏电流。 具体 半导体材料将包括n型 InP、GaAs、InAlAs和InGaAs。 二极管将 用冷却的衬底制造， 77 K，一个已经给出了 以增加的形式取得了可喜的成果 势垒高度，在n-InP中为0.96 eV，以及 泄漏电流降低了几个数量级， 大小 金属Al、Cu、Au、Pd和Pt 将用于显示 费米能级。 研究的一个重要方面 包括理解CP的原因 接触，以提供这种改进的性能。 电子和光学数据将相互关联 具有高分辨率的结构和化学 数据 电气和光学数据将包括 电流-电压-温度 传导机制，深能级瞬态 光谱学，光反射光谱学， 光反射光谱和拉曼 谱 高分辨透射 电子显微镜和化学分析将 与其他数据相关。 后来的焦点 将把CP技术应用于 量子阱和超晶格结构， 非常尖锐的界面 重要性

High barrier height, low leakage current Schottky contacts to III-V semiconductors are important for application to field effect transistors, optical sensors and photovoltaic converters. Schottky contacts to III-V semiconductors will be cryogenically processed (CP) to greatly increase barrier height and reduce leakage current. Specific semiconductor materials will include n-type InP, GaAs, InAlAs and IngaAs. Diodes will be fabricated with the substrate cooled to 77K, a process which already has given promising results in the form of increased barrier height, to 0.96 eV in n-InP, and reduced leakage current by several orders of magnitude. The metals Al, Cu, Au, Pd and Pt will be utilized to show unpinning of the Fermi level. An important aspect of the study involves understanding the reason for CP contacts to give such improved performance. Electrical and optical data will be correlated with high resolution structural and chemical data. Electrical and optical data will include current-voltage-temperature to reveal conduction mechanisms, deep level transient spectroscopy, photoreflectance spectroscopy, photoreflectance spectroscopy, and Raman spectroscopy. High resolution transmission electron microscopy and chemical analysis will be correlated with other data. A later focus will be made to apply the CP technique to quantum well and superlattice structures, where extremely sharp interfaces are of great importance.