Nondestructive Characterization and Optimization of StrainedTunneling Structures

系统地研究了GaAs基和InP基应变共振隧穿器件的结构优化问题。在设计结构时，将考虑由于使用应变层而产生的两个附加变量，即晶格应变和带隙。将使用现有的理论方法来计算I-V特性和隧道逃逸时间，例如，艾里函数方法。理论结果用势垒高度、厚度和井深厚度表示。根据模拟结果，器件结构将采用金属有机化学气相沉积或分子束外延生长。隧道二极管将被制造和表征。将器件的性能特性与各种理论模拟结果和接口等结构特性进行相关研究粗糙度，晶格应变、界面失配和层厚组成。非破坏性的结构表征将通过X射线摇摆曲线(XRC)、光致发光(PL)和光反射(PR)技术来执行。

A systematic study will be performed on the structural optimization of GaAs-based and InP-basedstrained resonant tunneling devices. The two additional variables which result from using the strained layers, namely the lattice strain and the band gap, will be considered in designing the structure. The I-V characteristics and tunneling escape times will be calculated using available theoretical methods such as, for example, the Airy function approach. Theoretical results are expressed in terms of the barrier height & thickness and well depth thickness. Based on the simulation results, device structures will be grown by metalorganic chemical vapor deposition or by molecular beam epitaxy. Tunneling diodes will be fabricated and characterized. Correlation studies will be made of the device performance characteristics with the various theoretical simulation results and the structural characteristics such as interface roughness, lattice strain, interface mismatch, and layer thicknesses compositions . Nondestructive structural characterization will be performed by the x-ray rocking curve (XRC), photoluminescence (PL), and photoreflectance (PR) techniques.