Nondestructive Characterization and Optimization of StrainedTunneling Structures

应变隧道结构的无损表征和优化

• 批准号: 8913229
• 负责人: Wayne Anderson
• 金额: $ 14.45万
• 依托单位: SUNY at Buffalo
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-02-15 至 1993-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8913229&HistoricalAwards=false
• 关键词: Nondestructive; Characterization; Optimization; StrainedTunneling; Structures

A systematic study will be performed on the structural optimization of GaAs-based and InP-basedstrained resonant tunneling devices. The two additional variables which result from using the strained layers, namely the lattice strain and the band gap, will be considered in designing the structure. The I-V characteristics and tunneling escape times will be calculated using available theoretical methods such as, for example, the Airy function approach. Theoretical results are expressed in terms of the barrier height & thickness and well depth thickness. Based on the simulation results, device structures will be grown by metalorganic chemical vapor deposition or by molecular beam epitaxy. Tunneling diodes will be fabricated and characterized. Correlation studies will be made of the device performance characteristics with the various theoretical simulation results and the structural characteristics such as interface roughness, lattice strain, interface mismatch, and layer thicknesses compositions . Nondestructive structural characterization will be performed by the x-ray rocking curve (XRC), photoluminescence (PL), and photoreflectance (PR) techniques.

对GaAs基和InP基应变谐振隧道器件的结构优化进行系统研究。 在设计结构时将考虑使用应变层产生的两个附加变量，即晶格应变和带隙。 I-V特性和隧道逃逸时间将使用可用的理论方法（例如艾里函数方法）来计算。 理论结果以势垒高度和厚度以及井深厚度来表示。 根据模拟结果，器件结构将通过金属有机化学气相沉积或分子束外延生长。 将制造隧道二极管并对其进行表征。 将器件性能特征与各种理论模拟结果和界面粗糙度、晶格应变、界面失配和层厚组成等结构特征进行相关研究。 将通过 X 射线摇摆曲线 (XRC)、光致发光 (PL) 和光反射 (PR) 技术进行无损结构表征。