Semiconductor Superlattices at High Hydrostatic Pressures

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The aim of the proposed research is to clarify the band structures and fundamental properties of quantum wells and superlattices constructed from semiconductors of the II-VI family, of which CdTe is a representative member. The methods to be employed involve the measurement of photoluminescence, photoluminescence excitation and optical absorption spectra at ambient and low temperatures and hydrostatic pressures up to 100 kilobars generated in anvil cells. The pressure dependences of the band structures of the constituent semiconductors of the quantum wells and superlattices are well established. Thus from measurement of the changes with pressure of the optical properties one can extract those properties attributable to the specific geometry of the quantum wells and superlattices. The use of high pressure in the investigation of superlattices offers the best method under certain circumstances of determining the energy offset between the valence band extrema of the constituent pair of semiconductors. An important method of measuring this offset, which is crucial to the defemination of all superlattice properties, is suggested. Collaborative arrangements have been made with other scientists to assure a ready supply of state-of-the-art research materials.