Semiconductor Superlattices at High Hydrostatic Pressures

高静水压力下的半导体超晶格

• 批准号: 9123829
• 负责人: William Paul
• 金额: $ 21万
• 依托单位: Harvard University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-08-01 至 1996-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9123829&HistoricalAwards=false
• 关键词: Semiconductor; Superlattices; Hydrostatic; Pressures

The aim of the proposed research is to clarify the band structures and fundamental properties of quantum wells and superlattices constructed from semiconductors of the II-VI family, of which CdTe is a representative member. The methods to be employed involve the measurement of photoluminescence, photoluminescence excitation and optical absorption spectra at ambient and low temperatures and hydrostatic pressures up to 100 kilobars generated in anvil cells. The pressure dependences of the band structures of the constituent semiconductors of the quantum wells and superlattices are well established. Thus from measurement of the changes with pressure of the optical properties one can extract those properties attributable to the specific geometry of the quantum wells and superlattices. The use of high pressure in the investigation of superlattices offers the best method under certain circumstances of determining the energy offset between the valence band extrema of the constituent pair of semiconductors. An important method of measuring this offset, which is crucial to the defemination of all superlattice properties, is suggested. Collaborative arrangements have been made with other scientists to assure a ready supply of state-of-the-art research materials.

提出的研究目的是阐明由II-VI族半导体构成的量子阱和超晶格的能带结构和基本性质，其中CdTe是代表成员。所采用的方法包括测量在室温和低温下的光致发光、光致发光激发和光吸收光谱，以及在砧细胞中产生的高达100千巴的静水压力。量子阱和超晶格组成的半导体带结构的压力依赖性已经很好地建立起来。因此，通过测量光学性质随压力的变化，人们可以提取出那些归因于量子阱和超晶格的特定几何形状的性质。在某些情况下，利用高压研究超晶格提供了确定半导体组成对的价带极值之间的能量偏移的最佳方法。提出了一种测量这种偏移量的重要方法，它对所有超晶格性质的定义都是至关重要的。已与其他科学家作出合作安排，以确保随时提供最先进的研究材料。