U.S.-Brazil Cooperative Science Research in the Study of Amorphous Hydrogenated Germanium

美国-巴西合作科学研究非晶态氢化锗

• 批准号: 8915070
• 负责人: William Paul
• 金额: $ 1.81万
• 依托单位: Harvard University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-07-01 至 1994-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8915070&HistoricalAwards=false
• 关键词: U.S.; Brazil; Cooperative; Science; Research

This award supports cooperative materials research in the applied physics of semiconductors to be conducted by William Paul of Harvard University and Ivan Chambouleyron of the University of Campinas in the state of Sao Paulo, Brazil. This work will involve a study of the fundamental properties of amorphous hydrogenated germanium, especially those important for photoelectronic applications. While a similar material, amorphous hydrogenated silicon is the usual material used for thin film solar cells and field-effect transistors, this research will seek more fundamental understanding of non- crystalline semiconductors made of hydrogenated silicon- germanium alloys and unalloyed amorphous hydrogenated germanium. This work will combine the efforts of two laboratories, each of which has special facilities. They will exchange samples, apply new research techniques and collaborate in the analysis of results to arrive at improved theories for the germanium materials and the alloys. Specific facilities at Harvard include glow discharge, photo-chemical vapor deposition and sputtering: those at Campinas, sputtering and reactive evaporation. Campinas has Mossbauer spectroscopy available while Harvard has special facilities for differential scanning calorimetry, gas evolution and time of flight measurements. Clearly, the facilities, experience and expertise of these two groups will complement each other and the collaboration will advance the scientific and device parameters of amorphous semiconductors.

该奖项支持由哈佛大学的William Paul和巴西圣保罗州坎皮纳斯大学的Ivan Chambouleyron在半导体应用物理领域进行的材料合作研究。这项工作将涉及研究非晶氢化锗的基本性质，特别是那些对光电子应用很重要的性质。非晶氢化硅是一种类似的材料，通常用于薄膜太阳能电池和场效应晶体管，本研究将寻求对氢化硅锗合金和非合金化非晶氢化锗制成的非晶半导体的更基本的认识。这项工作将结合两个实验室的努力，每个实验室都有专门的设备。他们将交换样品，应用新的研究技术，并在分析结果方面进行合作，以改进锗材料和合金的理论。哈佛大学的具体设备包括辉光放电、光化学气相沉积和溅射：坎皮纳斯的设备、溅射和反应性蒸发。坎皮纳斯有穆斯堡尔光谱学，而哈佛大学有专门的差示扫描量热仪、气体演化和飞行时间测量设备。显然，这两个小组的设备，经验和专业知识将相互补充，合作将推进非晶半导体的科学和器件参数。