Regenerative Epitaxial Growth of Single Crystal Diamond Films

利用等离子体辅助气相沉积技术在低压下合成金刚石，为实现具有优异性能和耐高温耐辐射能力的金刚石基电子器件开辟了前景。这种应用要求金刚石薄膜是单晶形式。然而，由于目前缺乏对成核过程的理解和控制能力，实现任何显著尺寸的外延生长单晶金刚石仍然是一个虚幻的目标。提出了一种单晶金刚石薄膜低压同质外延生长的替代策略，该策略通过循环生长、剥离和再生来保留衬底。该策略是基于亚级非晶化的离子注入技术，已证明在其他情况下。第一阶段的工作是确定这些技术是否可以依次组合并保持有效，从而实现制备单晶金刚石薄膜的有效技术。

The synthesis of diamond at low pressure by the plasma assisted vapor deposition process has opened up the prospect for the realization of diamond based electronic devices with superior performance and high temperature and radiation tolerance capabilities. Such applications require the diamond film to be in single crystal form. The realization of epitaxial grown single crystal diamond in any significant size, however, remains as an illusive goal mainly due to present lack of understanding and ability to control the nucleation process. An alternate strategy for low pressure homo-epitaxial growth of single crystal diamond films which preserves the substrate by employing cyclic growth, lift-off and regrowth is proposed. The strategy is based on sub-level amorphization by ion-implantation techniques that have been demonstrated in other contexts. The Phase I effort is to determine if these techniques can be combined sequentially and remain effective, leading to the realization of an effective technique for the preparation of single crystal diamond films.