A Unique and New Plasma Assisted Deposition Technique Utilizing In-Situ Renucleation

利用原位再核的独特的新型等离子体辅助沉积技术

• 批准号: 9161393
• 负责人: James Withers
• 金额: $ 5万
• 依托单位: Materials and Electrochemical Research Corporation (MER)
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-01-01 至 1992-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9161393&HistoricalAwards=false
• 关键词: Unique; New; Plasma; Assisted; Deposition

New technologies for producing useful products with engineered microstructure and properties for optimized mechanical performance creates an insatiable demand for materials processing and manufacturing. Plasma assisted chemical vapor deposition (PACVD) is a new technique for materials processing that has the capability to substantially enhance deposition rates. "Working" of a deposition surface can cause continued renucleation to produce a very fine grained deposit, defect and stress free that is smooth to virtually any thickness with substantially improved mechanical properties. The program will develop a high watt density plasma chemical vapor deposition (CVD) process coupled with continual in- situ "working" of the deposition surface to achieve extraordinarily high deposition rates in a very fine grained stress free deposits with mechanical properties substantially greater than conventional materials. The process will be demonstrated with difficult to fabricate refractory materials.

生产具有工程微观结构和性能以优化机械性能的有用产品的新技术对材料加工和制造产生了永不满足的需求。等离子体辅助化学气相沉积（PACVD）是一种新型的材料加工技术，具有显著提高沉积速率的能力。沉积表面的“工作”可以导致持续的再核化，从而产生非常细粒度的沉积，没有缺陷和应力，几乎可以光滑到任何厚度，并且大大提高了机械性能。该计划将开发一种高瓦密度等离子体化学气相沉积（CVD）工艺，并结合沉积表面的连续原位“工作”，以实现非常高的沉积速率，在非常细粒度的无应力沉积物中，其机械性能大大优于传统材料。该工艺将以难制造的耐火材料为例进行演示。