Optical and Far Infrared Studies of Semiconductor Heterostructures

半导体异质结构的光学和远红外研究

• 批准号: 9208400
• 负责人: Margaret Dobrowolska
• 金额: $ 47万
• 依托单位: University of Notre Dame
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-08-15 至 1997-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9208400&HistoricalAwards=false
• 关键词: Optical; Far; Infrared; Studies; Semiconductor

This project deals with electronic and magnetic properties of semiconductor heterostructures. These materials are being studied with far infrared (FIR) and visible spectroscopy. The heterostructures are fabricated in-house. The project has three components. First is FIR magnetospectroscopy of interfaces between III-V semiconductors and II-VI based diluted magnetic semiconductors, in order to determine how the two-dimensional electron gas on the III-V side of the interface is affected by proximity to magnetic electron wave functions from a DMS material. Second, the fundamental electronic and magentic properties of digital alloys (ultra-short-period superlattices grown monolayer- by-monolayer) are being studied by spectroscopy. Finally, the program concentrates on optical studies of DMS materials in which band tuning can be achieved by Zeeman adjustment of the band alignment at interfaces.

本项目研究半导体异质结的电子和磁性。这些材料正在用远红外(FIR)和可见光光谱进行研究。异质结构是在内部制造的。该项目有三个组成部分。首先是对III-V半导体和II-VI基稀磁半导体之间的界面进行FIR磁谱分析，以确定界面III-V侧的二维电子气如何受到来自DMS材料的磁性电子波函数的接近程度的影响。其次，用光谱学研究了数字合金(单层生长的超短周期超晶格)的基本电学和磁学性质。最后，该程序集中于DMS材料的光学研究，其中可以通过塞曼调节界面处的能带排列来实现能带调谐。