Electron Spin Effects in Semiconductor Nanostructures

半导体纳米结构中的电子自旋效应

• 批准号: 1005851
• 负责人: Margaret Dobrowolska
• 金额: $ 60万
• 依托单位: University of Notre Dame
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-09-01 至 2014-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1005851&HistoricalAwards=false
• 关键词: Electron; Spin; Effects; Semiconductor; Nanostructures

****NON-TECHNICAL ABSTRACT****There is currently an intense worldwide movement in contemporary electronics to explore the role of the electron spin, a quantum mechanical magnetic property of the electron, - in addition to the electron's charge - with an eye on increasing the functionality of electronic microchip devices, particularly in the realm of computation. This award supports a project to address the issue by employing state-of-the-art techniques to fabricate and characterize a series of novel semiconductor nano-scale structures in which the role of the electron spin is magnified by incorporating magnetic ions. By training graduate and undergraduate students in cutting-edge semiconductor fabrication techniques as well as in designing multi-functional materials, the project is expected to have a broad impact far beyond its immediate goals. Skills in these areas of materials science are in broad demand in U.S. Industry, National Laboratories, and Academia. Additionally, the Notre Dame team collaborates with many scientists (currently with more than thirty-five other institutions) either by providing research samples or by carrying out joint experiments. This activity of dissemination and sharing of results (which has the added benefit of exposing students to inter-institutional and inter-disciplinary collaborations) is expected to further expand as new spin-based electronic materials are developed in the course of the investigation.**** TECHNICAL ABSTRACT****This grant supports a project that focuses on two new complementary areas involving spin phenomena in low dimensional magnetic semiconductor systems. First, by using molecular beam epitaxy (MBE), dendritic nanowires based on magnetic semiconductors, including both II-Mn-VI and III-Mn-V alloys will be fabricated and studied. The second area will involve MBE growth and study of GaMnAs/Ge systems, a lattice-matched combination characterized by a special band alignment that is expected to lead to new spin effects and new insights both in multilayer and in nanowire geometries. The project is expected to have a broad impact far beyond its explicit scientific goals by contributing to the arsenal of spin-electronics materials generally; and by training graduate and undergraduate students in cutting-edge semiconductor fabrication techniques and in designing multi-functional materials, thus contributing to U.S. manpower skills in areas which are in wide demand in U.S. Industry, National Laboratories, and Academia. Additionally, the Notre Dame team already collaborates with many scientists (currently with more than thirty-five other institutions) either by providing research samples or by carrying out joint experiments. This activity of dissemination and sharing of results is expected to further intensify as new spin-electronic materials are developed during this investigation.

* 非技术性摘要 * 目前，在当代电子学中，有一个激烈的世界性运动，以探索电子自旋的作用，电子的量子力学磁特性，-除了电子的电荷-着眼于增加电子微芯片设备的功能，特别是在计算领域。 该奖项支持一个解决这一问题的项目，该项目采用最先进的技术来制造和表征一系列新型半导体纳米级结构，其中通过引入磁性离子来放大电子自旋的作用。通过培训研究生和本科生掌握先进的半导体制造技术以及设计多功能材料，该项目预计将产生远远超出其近期目标的广泛影响。材料科学的这些领域的技能在美国工业，国家实验室和学术界的广泛需求。此外，圣母大学的团队与许多科学家（目前与超过35个其他机构）合作，要么提供研究样本，要么进行联合实验。这种传播和分享成果的活动（其额外的好处是使学生接触到机构间和学科间的合作）预计将进一步扩大，因为在调查过程中开发了新的基于自旋的电子材料。技术摘要 * 该基金支持一个项目，重点是两个新的互补领域，涉及低维磁性半导体系统中的自旋现象。首先，利用分子束外延（MBE），树枝状纳米线的磁性半导体，包括II-Mn-VI和III-Mn-V合金的基础上制造和研究。第二个领域将涉及MBE生长和GaMnAs/Ge系统的研究，这是一种晶格匹配的组合，其特征在于具有特殊的能带排列，有望在多层和纳米线几何结构中产生新的自旋效应和新的见解。该项目预计将产生广泛的影响，远远超出其明确的科学目标，有助于一般的自旋电子材料的武库;并通过培训研究生和本科生在尖端的半导体制造技术和设计多功能材料，从而有助于美国人力技能在美国工业，国家实验室和学术界广泛需求的领域。此外，圣母大学的团队已经与许多科学家（目前与超过35个其他机构）合作，无论是通过提供研究样本还是通过进行联合实验。随着新的自旋电子材料在研究期间的开发，这种传播和分享结果的活动预计将进一步加强。