Electron Spin Effects in Semiconductor Nanostructures

半导体纳米结构中的电子自旋效应

• 批准号: 1005851
• 负责人: Margaret Dobrowolska
• 金额: $ 60万
• 依托单位: University of Notre Dame
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-09-01 至 2014-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1005851&HistoricalAwards=false
• 关键词: Electron; Spin; Effects; Semiconductor; Nanostructures

****NON-TECHNICAL ABSTRACT****There is currently an intense worldwide movement in contemporary electronics to explore the role of the electron spin, a quantum mechanical magnetic property of the electron, - in addition to the electron's charge - with an eye on increasing the functionality of electronic microchip devices, particularly in the realm of computation. This award supports a project to address the issue by employing state-of-the-art techniques to fabricate and characterize a series of novel semiconductor nano-scale structures in which the role of the electron spin is magnified by incorporating magnetic ions. By training graduate and undergraduate students in cutting-edge semiconductor fabrication techniques as well as in designing multi-functional materials, the project is expected to have a broad impact far beyond its immediate goals. Skills in these areas of materials science are in broad demand in U.S. Industry, National Laboratories, and Academia. Additionally, the Notre Dame team collaborates with many scientists (currently with more than thirty-five other institutions) either by providing research samples or by carrying out joint experiments. This activity of dissemination and sharing of results (which has the added benefit of exposing students to inter-institutional and inter-disciplinary collaborations) is expected to further expand as new spin-based electronic materials are developed in the course of the investigation.**** TECHNICAL ABSTRACT****This grant supports a project that focuses on two new complementary areas involving spin phenomena in low dimensional magnetic semiconductor systems. First, by using molecular beam epitaxy (MBE), dendritic nanowires based on magnetic semiconductors, including both II-Mn-VI and III-Mn-V alloys will be fabricated and studied. The second area will involve MBE growth and study of GaMnAs/Ge systems, a lattice-matched combination characterized by a special band alignment that is expected to lead to new spin effects and new insights both in multilayer and in nanowire geometries. The project is expected to have a broad impact far beyond its explicit scientific goals by contributing to the arsenal of spin-electronics materials generally; and by training graduate and undergraduate students in cutting-edge semiconductor fabrication techniques and in designing multi-functional materials, thus contributing to U.S. manpower skills in areas which are in wide demand in U.S. Industry, National Laboratories, and Academia. Additionally, the Notre Dame team already collaborates with many scientists (currently with more than thirty-five other institutions) either by providing research samples or by carrying out joint experiments. This activity of dissemination and sharing of results is expected to further intensify as new spin-electronic materials are developed during this investigation.

****非技术摘要****目前，当代电子学领域正在掀起一场激烈的全球运动，以探索电子自旋的作用，电子自旋是电子的一种量子力学磁性特性，除了电子电荷之外，着眼于提高电子微芯片设备的功能，特别是在计算领域。 该奖项支持一个项目来解决这个问题，该项目采用最先进的技术来制造和表征一系列新颖的半导体纳米级结构，其中通过结合磁性离子来放大电子自旋的作用。通过对研究生和本科生进行尖端半导体制造技术以及多功能材料设计方面的培训，该项目预计将产生远远超出其近期目标的广泛影响。美国工业界、国家实验室和学术界对材料科学这些领域的技能有着广泛的需求。此外，圣母大学团队还与许多科学家（目前与超过三十五家其他机构）合作，提供研究样本或进行联合实验。随着新的基于自旋的电子材料在研究过程中的开发，这种传播和分享结果的活动（其额外好处是让学生接触到跨机构和跨学科的合作）预计将进一步扩大。****技术摘要****这项资助支持一个项目，重点关注涉及低维磁性半导体系统中自旋现象的两个新的互补领域。首先，通过使用分子束外延（MBE），将制造和研究基于磁性半导体的树枝状纳米线，包括II-Mn-VI和III-Mn-V合金。第二个领域将涉及 MBE 生长和 GaMnAs/Ge 系统的研究，这是一种晶格匹配的组合，其特征是特殊的能带排列，预计将在多层和纳米线几何结构中产生新的自旋效应和新的见解。该项目预计将通过为自旋电子材料库做出贡献，产生远远​​超出其明确科学目标的广泛影响；通过对研究生和本科生进行尖端半导体制造技术和多功能材料设计方面的培训，从而为美国工业界、国家实验室和学术界广泛需求的领域的美国人力技能做出贡献。此外，圣母大学团队已经与许多科学家（目前与超过三十五家其他机构）合作，提供研究样本或进行联合实验。随着本次研究期间新的自旋电子材料的开发，这种结果的传播和共享活动预计将进一步加强。