Real Time Studies of the Evolution of Structural, Optical, and Electronic Properties in Thin Films

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This research employs on a novel time-resolved spectroscopy for specular thin films and surfaces based on ellipsometry. Rapidly evolving thin films and surfaces can be characterized in real time with sub-monolayer sensitivity and resolution. The technique differs from alternative methods because of its speed, it requires no in vacuo instrumentation, it operates passively during deposition, and it can probe surfaces even in the most adverse environments such as chemical vapor deposition. The technique is being applied to a number of growth processes in group IV semiconductors. %%% This project continues the development and application of a technique to measure the deposition of atomic layers. The technique is unique in that it measures the growth atomic layer by atomic layer. In addition, it is very fast and robust and can be used to monitor growth of semiconductor layers in the chambers that are used commercially. The technique is based on reflection of light from the surface that is growing. The technique is being applied to a number of materials, primarily semiconductors.