U.S.-France Cooperative Research: Growth and Process Induced Defects of InP-Based Heterostructure Devices

美法合作研究：InP 异质结构器件的生长和工艺引起的缺陷

• 批准号: 9217513
• 负责人: Dimitris Pavlidis
• 金额: $ 1.7万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-04-15 至 1997-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9217513&HistoricalAwards=false
• 关键词: U.S.; France; Cooperative; Research; Growth

This three-year award supports U.S.-France cooperative research in microelectronics among Dimitris Pavlidis, University of Michigan, Frederique Ducroquet, National Institute for Applied Sciences (INSA), and S. K. Krawczyk of the Ecole Centrale in Lyon, France. The objective of the project is to study optimization, process control and reliability of high electron mobility transistors (HEMTs). The basic heterostructures for HEMTs will be grown, designed, fabricated and electrically characterized at the University of Michigan. These samples will be further analyzed by various material characterization techniques developed at INSA and the Ecole Centrale in Lyon. The investigators will characterize the material under optimum growth conditions, analyze the process and defects induced by thermal stress. The U.S. investigator brings to this collaboration expertise in performance optimization of HEMTS and other electronic devices and the fabrication of novel HEMTs. This is complemented by French expertise in various characterization techniques, which include photo and electro-reflectance characterization. The results from the material analysis will advance understanding of the effects of growth conditions on material properties and the reliability of such structures. Such studies are important to the development of new semiconductor devices.

这个为期三年的奖项支持密歇根大学的 Dimitris Pavlidis、国家应用科学研究所 (INSA) 的 Frederique Ducroquet 和法国里昂中央理工学院的 S.K. Krawczyk 之间的美法微电子合作研究。 该项目的目标是研究高电子迁移率晶体管（HEMT）的优化、过程控制和可靠性。 HEMT 的基本异质结构将在密歇根大学进行生长、设计、制造和电气表征。 这些样品将通过 INSA 和里昂中央理工大学开发的各种材料表征技术进行进一步分析。 研究人员将在最佳生长条件下表征材料，分析热应力引起的过程和缺陷。 美国研究人员为此次合作带来了 HEMTS 和其他电子设备性能优化以及新型 HEMT 制造方面的专业知识。 法国在各种表征技术方面的专业知识对此进行了补充，其中包括照片和电反射表征。 材料分析的结果将促进对生长条件对材料性能和此类结构可靠性影响的理解。 此类研究对于新型半导体器件的开发非常重要。