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AlGaN/GaN Heterostructure Field-Effect Transistor Free-Space Combining Oscillator: An Approach for Solar Power Conversion to High RF Power for Wireless Transmission to Earth

AlGaN/GaN Heterostructure Field-Effect Transistor Free-Space Combining Oscillator: An Approach for Solar Power Conversion to High RF Power for Wireless Transmission to Earth
AlGaN/GaN 异质结构场效应晶体管自由空间组合振荡器:一种将太阳能转换为高射频功率以无线传输到地球的方法
批准号:
0233500
负责人:
Dimitris Pavlidis
金额:
$21.5万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2002
资助国家:
美国
项目状态:
已结题
起止时间:
2002-10-01 至 2005-03-31

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中文摘要
翻译
对50年左右的电力需求的预测意味着商业电力水平的使用将是今天的3到5倍。同时,每千瓦时的发电成本需要降低10倍左右。此外,考虑到清洁、无污染的替代能源的必要性,以及放弃核能发电的趋势,太阳能发电越来越有吸引力。然而,到2050年,基于地球的太阳能电池发电的预测水平意味着一个不切实际的大地球表面积(大约是整个美国的1/5)。因此,必须采用其他方法来利用太阳能,而基于太空的太阳能阵列提供了这种可能性。该方案通过采用高功率宽带隙半导体器件的空间功率组合振荡器阵列解决无线电力传输(WPT)问题。pi将解决设计由数千个A1GaN/GaN异质结构场效应晶体管(hfet)组成的非常大,低轮廓,印刷,有源和自振荡注入锁定天线阵列的理论和实践方面的问题,以产生强大的相干微波束。GaN hfet及其高频、非线性和噪声特性将优化用于wpt中的DC到RF转换。提出的研究解决了宽带隙固态器件问题,微波传输及其在空间功率组合阵列中的实现。pi的目标是设计一个高度稳定,高效和无多模的振荡器阵列,可以容忍多种器件故障。低成本和自组装是其他特点。他们的设计方法是从对靠近辐射元件的多器件注入锁定振荡器进行基础研究和分析开始,设计、优化和构建大型、稳定和高效的注入锁定空间组合振荡器阵列的技术。在该项目下提出的创新方法将导致对基于氮化镓的器件、振荡器和空间功率组合的理解,并与太阳能电池产生的功率相结合。这将为射频功率传输开辟新的可能性,以满足2050年每人2kW的预计需求,转换为20tera瓦。
英文摘要
0233500PavlidisPredictions of the power needed in 50 years or so imply commercial power levels usages 3 to 5 times greater than today's. Meanwhile, power generation cost per kWh need be about 10 times less. Further, considering the necessity for clean, non-polluting alternative sources of energy, and a trend to abandon nuclear power generation makes solar power sources, increasingly more attractive. However, earth-based solar cell power generation at the predicted level by 2050 implies an unrealistically large earth surface area (about 1/5 of the entire United States). Thus, alternative means must be employed to harness solar power, and space-based solar arrays offer this possibility. This proposal addresses wireless power transmission (WPT) by means of spatial power-combining oscillator arrays that employ high power widebandgap semiconductor devices.The PIs will address the theoretical and practical aspects of designing very large, low profile, printed, active and self-oscillating injection locked antenna arrays consisting of thousands of A1GaN/GaN Heterostructure Field Effect Transistors (HFETs) to generate a powerful coherent microwave beam. GaN HFETs and their high-frequency, non-linear and noise characteristics will be optimized for DC to RF conversion in WPTs. The proposed studies address widebandgap solid-state device issues central to transmission by microwaves and their implementation in spatial power combining arrays.The PIs goal are to design a highly stable, efficient and multimode-free oscillator array that is tolerant to multiple device failures. Low cost and self-assembly are other attributes. Their design approach is to start with a fundamental study and analysis of multiple device injection locked oscillators in close proximity with radiating elements and devise techniques to design, optimize and construct large, stable and efficient injection locked spatially combined oscillator arrays. The innovative approaches proposed under this program will lead in understanding of GaN-based device, oscillator and spatial power combination in conjunction with power generated by solar cells. This will open new possibilities in RF power transmission for satisfying projected needs of 2kW per person in 2050, translating to 20 tera Watts.
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EAGER Collaborative Research: Fundamentals of Tunneling, Heterojunction-based 2D-Hot Electron Transistors
  • 批准号:
    2029657
  • 项目类别:
    Standard Grant
  • 资助金额:
    $13.96万
  • 财政年份:
    2020
  • 负责人:
    Dimitris Pavlidis
  • 依托单位:
U.S.-France Cooperative Research: Growth and Process Induced Defects of InP-Based Heterostructure Devices
国内基金
海外基金
垂直型GaN肖特基势垒二极管研究
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  • 项目类别:
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  • 资助金额:
    --
  • 批准年份:
    2026
  • 负责人:
    刘梦涵
  • 依托单位:
异质结极化场局域调控机制与选区外延p-GaN HEMT研究
基于金刚石高效散热封装的高功率高压GaN器件研发与产业化
复合抗磨涂层仿生微结构化表面自润滑 金刚石砂轮的制备与其磨削单晶GaN基础 研究
  • 批准号:
  • 项目类别:
    省市级项目
  • 资助金额:
    10.0万元
  • 批准年份:
    2025
  • 负责人:
    戴厚富
  • 依托单位: