AlGaN/GaN Heterostructure Field-Effect Transistor Free-Space Combining Oscillator: An Approach for Solar Power Conversion to High RF Power for Wireless Transmission to Earth

AlGaN/GaN 异质结构场效应晶体管自由空间组合振荡器：一种将太阳能转换为高射频功率以无线传输到地球的方法

• 批准号: 0233500
• 负责人: Dimitris Pavlidis
• 金额: $ 21.5万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-10-01 至 2005-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0233500&HistoricalAwards=false
• 关键词: AlGaN; GaN; Heterostructure; Field; Effect

0233500PavlidisPredictions of the power needed in 50 years or so imply commercial power levels usages 3 to 5 times greater than today's. Meanwhile, power generation cost per kWh need be about 10 times less. Further, considering the necessity for clean, non-polluting alternative sources of energy, and a trend to abandon nuclear power generation makes solar power sources, increasingly more attractive. However, earth-based solar cell power generation at the predicted level by 2050 implies an unrealistically large earth surface area (about 1/5 of the entire United States). Thus, alternative means must be employed to harness solar power, and space-based solar arrays offer this possibility. This proposal addresses wireless power transmission (WPT) by means of spatial power-combining oscillator arrays that employ high power widebandgap semiconductor devices.The PIs will address the theoretical and practical aspects of designing very large, low profile, printed, active and self-oscillating injection locked antenna arrays consisting of thousands of A1GaN/GaN Heterostructure Field Effect Transistors (HFETs) to generate a powerful coherent microwave beam. GaN HFETs and their high-frequency, non-linear and noise characteristics will be optimized for DC to RF conversion in WPTs. The proposed studies address widebandgap solid-state device issues central to transmission by microwaves and their implementation in spatial power combining arrays.The PIs goal are to design a highly stable, efficient and multimode-free oscillator array that is tolerant to multiple device failures. Low cost and self-assembly are other attributes. Their design approach is to start with a fundamental study and analysis of multiple device injection locked oscillators in close proximity with radiating elements and devise techniques to design, optimize and construct large, stable and efficient injection locked spatially combined oscillator arrays. The innovative approaches proposed under this program will lead in understanding of GaN-based device, oscillator and spatial power combination in conjunction with power generated by solar cells. This will open new possibilities in RF power transmission for satisfying projected needs of 2kW per person in 2050, translating to 20 tera Watts.

对未来50年左右的电力需求的预测意味着商业电力使用水平比今天高3到5倍。此外，考虑到清洁、无污染的替代能源的必要性，以及放弃核能发电的趋势，太阳能发电越来越具有吸引力。然而，到2050年，地球上的太阳能电池发电量在预测水平上意味着不切实际的大地球表面积（约为整个美国的1/5）。因此，必须采用其他手段来利用太阳能，空间太阳能阵列提供了这种可能性。该提案通过采用高功率宽带隙半导体器件的空间功率组合振荡器阵列来解决无线功率传输（WPT）问题。PI将解决设计超大型、低轮廓、印刷、有源和自激振荡注入锁定天线阵列由数千个A1 GaN/GaN异质结构场效应晶体管（HFET）组成，可产生强大的相干微波束。GaN HFET及其高频、非线性和噪声特性将针对WPT中的DC到RF转换进行优化。拟议的研究解决宽带隙固态器件的问题，通过微波传输和空间功率合成arrays.The PI的目标是设计一个高度稳定，高效和多模自由振荡器阵列，是容忍多个设备故障的实现。低成本和自我组装是其他属性。他们的设计方法是从与辐射元件紧密接近的多个器件注入锁定振荡器的基本研究和分析开始，并设计技术来设计、优化和构建大型、稳定和高效的注入锁定空间组合振荡器阵列。根据该计划提出的创新方法将导致对GaN基器件，振荡器和空间功率组合与太阳能电池产生的功率的理解。这将为射频功率传输开辟新的可能性，以满足2050年每人2kW的预计需求，相当于20太瓦。