Temperature Stable Alternative to Li Compensation of Silicon Radiation Sensors

硅辐射传感器锂补偿的温度稳定替代方案

• 批准号: 9260700
• 负责人: John Walter
• 金额: $ 5万
• 依托单位: IntraSpec Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-01-01 至 1993-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9260700&HistoricalAwards=false
• 关键词: Temperature; Stable; Alternative; Li; Compensation

Silicon x-ray energy spectrometers have become very important tools for elemental analysis in research and industry. The deep sensitive depths required for Si x-ray detectors and some other Si detectors and some other Si detector applications are usually obtained by a Li compensation technique commonly referred to as Li Drifting. Unfortunately, the Li compensation, Si(Li), is only quasi-stable at room temperature and very unstable at higher temperatures. This temperature stability problem limits the performance and general usefulness of these detectors by prohibiting modern device processing technologies like oxide surface passivation and high temperature contact formation. The lack of oxide surface passivation to limit noise from surface leakage currents places severe restrictions on the maximum operating temperature of Li compensated detectors. The lack of a rugged oxide passivation and rugged diffused or implanted contacts seriously restricts the operating ambient of Si(Li) devices. We outline here an alternative approach to compensation of Si which should allow sensitive depths 3 mm, be compatible with high temperature oxide passivations, allow high temperature contact formation, and be much cheaper than Li drifting. This new technology should result in cheaper x-ray detectors which will operate well at temperatures obtainable with thermoelectric or other simple cooling techniques rather than liquid nitrogen. It should also make it possible to build very large area, deep sensitive depth detectors at reasonable prices.

硅X射线能谱仪已经成为非常重要的工具 用于研究和工业中的元素分析。 深 Si x射线探测器和一些其他Si 探测器和一些其他Si探测器应用通常 通过通常称为Li的Li补偿技术获得 漂泊。 不幸的是，李赔偿，Si（李），只有 在室温下准稳定，在较高温度下非常不稳定 温度 这种温度稳定性问题限制了 这些探测器的性能和一般用途， 禁止现代设备处理技术，如氧化物 表面钝化和高温接触形成。 的 缺乏氧化物表面钝化以限制来自表面噪声 泄漏电流对最大电流的 Li补偿探测器的工作温度。 缺乏一个 粗糙的氧化物钝化和粗糙的扩散或注入接触 严重限制了Si（Li）器件的工作环境。 我们 在此概述了补偿Si的替代方法， 应允许敏感深度3毫米，兼容高 高温氧化物钝化，允许高温接触 形成，并比李漂流便宜得多。 这个新 技术应该会导致更便宜的X射线探测器， 在使用热电或 其他简单的冷却技术，而不是液氮。 它 还应该使得能够建立非常大面积、深 灵敏的深度探测器，价格合理。