SBIR Phase I: Silicon Avalanche Detector Arrays with Wide Spectral Response

SBIR 第一阶段：具有宽光谱响应的硅雪崩探测器阵列

• 批准号: 9860160
• 负责人: John Walter
• 金额: $ 10万
• 依托单位: IntraSpec Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-01-01 至 1999-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9860160&HistoricalAwards=false
• 关键词: SBIR; Phase; Silicon; Avalanche; Detector

9860160 This Small Business Innovation Research Phase I project will show the feasibility of new technology that will allow the fabrication of silicon avalanche photodiode (APD) arrays which can be used for x-ray, charged particle, and optical imaging with improved quantum efficiency at the deep red end of the spectrum (i.e., 60% at 1, um) and at the violet end of the spectrum. The proposed design is based on a modified reach through structure. Improvements for charged particles and photons at the violet end of the spectrum will come from using a new ultra-shallow junction technology. Improvements for x-rays and photons at the deep red end of the spectrum will come from improved configuration and n-type Si with ultra-high resistivity and excellent minority carrier lifetime. Improvements in noise and pixel isolation will come from new technology for junction edge passivation. Improvements in avalanche gain and gain uniformity will come from improved techniques for fabricating the avalanche zone. In Phase I, we expect to prove feasibility by showing that we can maintain the required properties of the n-type Si and by demonstrating that we can provide surface passivation adequate for acceptable pixel isolation. There are many commercial and potential commercial markets for Si APDs and APD arrays ranging from simple laser detection, through replacement of photo multiplier tubes for scintillation detectors, to low energy x-ray detection and spectroscopy. A technology which improves the spectral coverage and makes extended arrays possible will heavily impact existing markets as well as creating new market potential.

9860160 这个小企业创新研究第一阶段项目将展示新技术的可行性，该技术将允许制造硅雪崩光电二极管（APD）阵列，该阵列可用于X射线，带电粒子和光学成像，在光谱的深红色端（即，在1 μ m处为60%）和在光谱的紫色端。拟议的设计是基于一个修改后的达到通过结构。光谱紫端的带电粒子和光子的改进将来自于使用新的超浅结技术。在光谱的深红色端的X射线和光子的改进将来自于改进的配置和具有超高电阻率和优异的少数载流子寿命的n型Si。噪声和像素隔离的改进将来自结边缘钝化的新技术。雪崩增益和增益均匀性的改进将来自于用于制造雪崩区的改进技术。在第一阶段，我们希望通过证明我们可以保持所需的n型硅的属性，并证明我们可以提供足够的表面钝化可接受的像素隔离证明可行性。 硅APD和APD阵列有许多商业和潜在的商业市场，从简单的激光检测，通过更换闪烁探测器的光电倍增管，到低能X射线检测和光谱学。一项提高频谱覆盖范围并使扩展阵列成为可能的技术将对现有市场产生重大影响，并创造新的市场潜力。