A Novel Process to Produce Continuous Single Crystal SiC Fibers

生产连续单晶碳化硅纤维的新工艺

• 批准号: 9260843
• 负责人: Richard McCormick
• 金额: $ 5万
• 依托单位: Materials and Electrochemical Research Corporation (MER)
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-01-01 至 1993-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9260843&HistoricalAwards=false
• 关键词: Novel; Process; Produce; Continuous; Single

Silicon carbide whiskers which are single crystal SiC are known to exhibit near theoretical mechanical properties including virtually no creep and strength retention at high temperatures. The techniques of growing single crystal SiC whiskers will be adapted to the growth of continuous single crystal SiC fibers. Development of continuous filament SiC that has exceptional strength and creep resistance to very high temperatures will contribute to the development of advanced ceramic, intermetallic and metal matrix composite materials in a variety of engine, energy conversion and structural applications.

碳化硅晶须是单晶 SiC，已知其表现出接近理论的机械性能，包括在高温下几乎无蠕变和强度保持。 单晶碳化硅晶须的生长技术将适用于连续单晶碳化硅纤维的生长。 开发具有优异强度和高温抗蠕变性的连续丝碳化硅，将有助于开发各种发动机、能源转换和结构应用中的先进陶瓷、金属间化合物和金属基复合材料。