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New Type of Infrared and Far Infrared Focal Plane Detector with Very Low NEP

New Type of Infrared and Far Infrared Focal Plane Detector with Very Low NEP
具有极低NEP的新型红外和远红外焦平面探测器
批准号:
9261151
负责人:
Andrew Hibbs
金额:
$5.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1993
资助国家:
美国
项目状态:
已结题
起止时间:
1993-01-15 至 1993-09-30

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中文摘要
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英文摘要
A new type of infrared multipixel staring array is proposed based upon the recently observed phenomenon of photofluxonics. The sensor is based on a simple Josephson junction and is the magnetic analogue of a CCD photosensor; a novel device geometry allows the direct conversion of photons to fluxons. The quantized nature of the photon to fluxon conversion process affords a very low NDP. Experiments indicate that single quantum sensitivity in the infrared and far infrared range of the spectrum is possible. An array of such detectors would be an all thin film, monolithic, focal plane device with inherently low power consumption. It will be possible to implement the associated read out electronics on the same substrate. Phase I will demonstrate the photofluxonic effect in a Nb-Al203- Nb Josephson junction and, according to the results, optimize the preliminary design for an array of superconducting photosensitive pixels. Although well characterized low Tc superconductors will be used in Phase I, the photofluxonic effect has also been observed in high Tc superconductors and there seems to be no major impediment to implementing the technology with high Tc materials in Phase II.
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