Research Initiation Award: "New Approaches to the Fabrication of Blue Semiconductor Laser Diodes by Vapor Phase Epitaxy"

研究启动奖：“气相外延制造蓝色半导体激光二极管的新方法”

• 批准号: 9309079
• 负责人: John Ayers
• 金额: $ 9万
• 依托单位: University of Connecticut
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-09-01 至 1997-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9309079&HistoricalAwards=false
• 关键词: Research; Initiation; Award; New; Approaches

WPCf 2 B J d | x MACNormal $ 5 X ` h p x (# % '0* , .81 3 5@8 : : } D 4 P T I. A. 1. a.(1)(a) i) a) T 0 * * . , US X ` h p x (# % '0* , .81 3 5@8 : : } D 4 P 0 * * . , US , 3 ' 1 MACNormal Ayers 9309079 Zinc selenide is a wide bandgap semiconductor which is of interest for use in blue light emitting diodes and lasers, which are important for applications in compact disk readonly memones (CD ROM's), high definition video displays, and secured underwater commumcations. In recent months, pulsed operation of zinc selenide based semiconductor blue lasers has been demonstrated at temperatures up to 250 K. Higher performance, namely continuous laser operation at room temperature, is desirable but has not been achieved due to the difficulties in obtaining stable, low resistivity p type ZnSe and low resistance ohmic contacts to n and p type ZnSe. Due to these difficulties, the blue lasers which have been fabricated by molecular beam epitaxy (MBE) to date have large forward voltage drops (15 30V) and also excessive power dissipation. We plan to develop ZnSe blue lasers using organometallic vapor phase epitaxy (OMVPE), with an emphasis on the development of low resistivity p type ZnSe and lowresistance ohmic contacts. P doped ZnSe will be produced by nitrogen doping from the novel alkyl sources, trimethylamine, triethylamine, and triisopropanolamine. Low resistance ohmic contacts will be fabricated using a unique approach based on gradedbandgap alloys of HgZnSe. ZnSe based laser structures will be fabricated using ZnSe/Znl_ xCdxSe/ZnSe single quantum wells and the techniques described above. ***

WPCf 2 B J D | X MAC正常 $ 5 X ` H p X （# % '0*，0.81 3 5@8： : } D 4 P 不 I. A. 1. a.（1）（a）㈠ a） 不 0个 * * . , 美国 X ` H p X （# % '0*，0.81 3 5@8： : } D 4 P 0个 * * . , 美国 , 3英尺 1 MAC正常 硒化锌是一种宽带隙半导体，其在蓝光发光二极管和激光器中的应用是令人感兴趣的，所述蓝光发光二极管和激光器对于在光盘只读存储器（CD ROM）、高清晰度视频显示器和安全水下通信中的应用是重要的。 近几个月来，基于硒化锌的半导体蓝光激光器的脉冲操作已经在高达250 K的温度下得到了证实。更高的性能，即在室温下连续的激光操作，是所希望的，但由于难以获得稳定的低电阻率p型ZnSe和与n和p型ZnSe的低电阻欧姆接触，所以还没有实现。由于这些困难，迄今为止通过分子束外延（MBE）制造的蓝光激光器具有大的正向电压降（15 ~ 30 V）和过大的功率消耗。 我们计划采用有机金属气相外延（OMVPE）技术研制ZnSe蓝光激光器，重点是低电阻p型ZnSe和低电阻欧姆接触的研制。P掺杂的ZnSe将由新的烷基源、三甲胺、三乙胺和三异丙醇胺通过氮掺杂来制备。低电阻欧姆接触将使用基于HgZnSe的梯度带隙合金的独特方法来制造。ZnSe基激光器结构将使用ZnSe/Zn 1-xCdxSe/ZnSe单量子威尔斯和上述技术来制造。***