Research Initiation Award: "New Approaches to the Fabrication of Blue Semiconductor Laser Diodes by Vapor Phase Epitaxy"

* * * * * * * * * * * * * * * * * * * *81 3 5@8::} d 4 p . i. a . 1；a.(1)(a) i) a) T 0 * *。,我们X ' h p X (# % '0*,；81 3 5@8:：} d 4 p 0 * *。,我们​,3 ' 1 mac正常硒化锌是一种宽带隙半导体，可用于蓝色发光二极管和激光器，这对于光盘只读存储器（CD ROM），高清晰度视频显示器和安全水下通信的应用非常重要。最近几个月，基于硒化锌的半导体蓝色激光器的脉冲操作已经在高达250 K的温度下得到了证明。更高的性能，即在室温下连续激光工作，是可取的，但由于难以获得稳定，低电阻率p型ZnSe和n型和p型ZnSe的低电阻欧姆接触，因此尚未实现。由于这些困难，迄今为止采用分子束外延（MBE）制造的蓝色激光器具有较大的正向压降（15 30V）和过大的功耗。我们计划利用有机金属气相外延（OMVPE）技术开发ZnSe蓝色激光器，重点是开发低电阻p型ZnSe和低电阻欧姆触点。P掺杂ZnSe将由新型烷基源、三甲胺、三乙胺和三异丙醇胺进行氮掺杂制备。低电阻欧姆触点将采用基于hznse梯度带隙合金的独特方法制造。利用ZnSe/Znl_ xCdxSe/ZnSe单量子阱和上述技术制备ZnSe基激光结构。* * *

WPCf 2 B J d | x MACNormal $ 5 X ` h p x (# % '0* , .81 3 5@8 : : } D 4 P T I. A. 1. a.(1)(a) i) a) T 0 * * . , US X ` h p x (# % '0* , .81 3 5@8 : : } D 4 P 0 * * . , US , 3 ' 1 MACNormal Ayers 9309079 Zinc selenide is a wide bandgap semiconductor which is of interest for use in blue light emitting diodes and lasers, which are important for applications in compact disk readonly memones (CD ROM's), high definition video displays, and secured underwater commumcations. In recent months, pulsed operation of zinc selenide based semiconductor blue lasers has been demonstrated at temperatures up to 250 K. Higher performance, namely continuous laser operation at room temperature, is desirable but has not been achieved due to the difficulties in obtaining stable, low resistivity p type ZnSe and low resistance ohmic contacts to n and p type ZnSe. Due to these difficulties, the blue lasers which have been fabricated by molecular beam epitaxy (MBE) to date have large forward voltage drops (15 30V) and also excessive power dissipation. We plan to develop ZnSe blue lasers using organometallic vapor phase epitaxy (OMVPE), with an emphasis on the development of low resistivity p type ZnSe and lowresistance ohmic contacts. P doped ZnSe will be produced by nitrogen doping from the novel alkyl sources, trimethylamine, triethylamine, and triisopropanolamine. Low resistance ohmic contacts will be fabricated using a unique approach based on gradedbandgap alloys of HgZnSe. ZnSe based laser structures will be fabricated using ZnSe/Znl_ xCdxSe/ZnSe single quantum wells and the techniques described above. ***