Epitaxial Alloys for Metallization of GaAs and InP Devices

在本提案中，我们提出了一个研究计划，旨在通过采用一种非常实用的技术来应用金属化的新方法来回答ULSI金属化的挑战。我们建议研究采用部分离子束沉积技术形成的GaAs和InP外延金属接触。该技术提供了表面自清洁、低温外延沉积、对沉积合金成分的良好控制，所有这些都在非特高压沉积室中进行。要研究的金属化是Al， CoSi2, Co2P， Ge2Co和A12Pt的外延膜。这些金属和合金薄膜是精心挑选的，以满足我们稳定金属化的需要，并有最好的机会在GaAs和InP上外延形成它们。将确定沉积，表征，包括工艺稳定性和适用性。最有希望的方案将用于在GaAs和/或InP上制造MESFET。＊＊＊

9310613 Lu In this proposal we present a research program that aims at answering the challenge of ULSI metalizations by adopting a new approach to applying metallization using a very practical technology. We propose to investigate the epitaxial metal contacts to GaAs and InP, formed using partially ionized beam deposition technique. This technique offers surface self-cleaning, low temperature epitaxial deposition, excellent control on composition of the alloys to be deposited, and all of this in a non UHV deposition chamber. The metallizations to be investigated are epitaxial films of Al, CoSi2, Co2P, Ge2Co, and A12Pt. These metal and alloy films are carefully selected to satisfy our needs of stable metallization with the best chance to form them epitaxially on GaAs and InP. The deposition, characterization including process stability, and applicability will be determined. The most promising scheme will then be used to fabricate a MESFET on GaAs and/or InP. ***