Epitaxial Alloys for Metallization of GaAs and InP Devices

9310613 Lu在本提案中，我们提出了一个研究计划，旨在通过采用一种新的方法来使用非常实用的技术应用金属化来应对ULSI金属化的挑战。 我们建议调查的外延金属接触GaAs和InP，形成使用部分电离束沉积技术。 该技术提供了表面自清洁、低温外延沉积、对待沉积合金的组成的优异控制，并且所有这些都在非UHV沉积室中进行。 待研究的金属化是Al、CoSi 2、Co 2 P、Ge 2 Co和Al 2 Pt的外延膜。 这些金属和合金薄膜经过精心挑选，以满足我们对稳定金属化的需求，并有最好的机会在GaAs和InP上外延形成它们。 将确定沉积、表征（包括工艺稳定性）和适用性。 最有前途的方案，然后将被用来制造一个MESFET的GaAs和/或InP。 ***

9310613 Lu In this proposal we present a research program that aims at answering the challenge of ULSI metalizations by adopting a new approach to applying metallization using a very practical technology. We propose to investigate the epitaxial metal contacts to GaAs and InP, formed using partially ionized beam deposition technique. This technique offers surface self-cleaning, low temperature epitaxial deposition, excellent control on composition of the alloys to be deposited, and all of this in a non UHV deposition chamber. The metallizations to be investigated are epitaxial films of Al, CoSi2, Co2P, Ge2Co, and A12Pt. These metal and alloy films are carefully selected to satisfy our needs of stable metallization with the best chance to form them epitaxially on GaAs and InP. The deposition, characterization including process stability, and applicability will be determined. The most promising scheme will then be used to fabricate a MESFET on GaAs and/or InP. ***