Epitaxial Alloys for Metallization of GaAs and InP Devices

9310613 Lu在这项建议中，我们提出了一个研究计划，旨在通过采用一种使用非常实用的技术来应用金属化的新方法来应对ULSI金属化的挑战。我们建议研究利用部分电离束沉积技术形成的与GaAs和InP的外延金属接触。这项技术提供了表面自清洁、低温外延沉积、对要沉积的合金成分的出色控制，以及在非超高电压沉积室中的所有这些。所研究的金属化是Al、CoSi2、Co2P、Ge2Co和A12Pt的外延薄膜。我们精心挑选了这些金属和合金薄膜，以满足我们稳定金属化的需要，并有最好的机会在GaAs和InP上外延形成它们。将确定沉积、包括工艺稳定性和适用性在内的表征。然后，最有希望的方案将被用于在GaAs和/或InP上制造MESFET。***

9310613 Lu In this proposal we present a research program that aims at answering the challenge of ULSI metalizations by adopting a new approach to applying metallization using a very practical technology. We propose to investigate the epitaxial metal contacts to GaAs and InP, formed using partially ionized beam deposition technique. This technique offers surface self-cleaning, low temperature epitaxial deposition, excellent control on composition of the alloys to be deposited, and all of this in a non UHV deposition chamber. The metallizations to be investigated are epitaxial films of Al, CoSi2, Co2P, Ge2Co, and A12Pt. These metal and alloy films are carefully selected to satisfy our needs of stable metallization with the best chance to form them epitaxially on GaAs and InP. The deposition, characterization including process stability, and applicability will be determined. The most promising scheme will then be used to fabricate a MESFET on GaAs and/or InP. ***