Surface Microtopography, Atom Transport and Epitaxial Growth

表面微形貌、原子传输和外延生长

• 批准号: 9313371
• 负责人: John Blakely
• 金额: $ 30万
• 依托单位: Cornell University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-02-15 至 1997-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9313371&HistoricalAwards=false
• 关键词: Surface; Microtopography; Atom; Transport; Epitaxial

9313371 Blakely Basic studies of materials growth and processing-- surface diffusion, step interactions, epitaxy--will be conducted to understand and control surface structural defects and the kinetics of surface morphological and compositional changes in the crystal growth of silicon, germanium, and strained layer alloy thin films; STM in combination with electron(LEED) and X- Ray diffraction will be used to provide full characterization of surface morphology as well as to study the dynamics of step rearrangement during growth. Patterned substrates are developed and used as a way to control the distribution of steps which allows an entire distribution of step densities to be studied simultaneously instead of having to use multiple samples. Samples with a distribution of step densities also have positive practical implications with respect to preventing and/or controlling three-dimensional nucleation and growth. %%% The primary goal of this program is to develop a fundamental understanding of surface diffusion, and elementary features of epitaxial growth and related processing of germanium and silicon. An important feature of the program is the education and training of students in a fundamentally and technologically significant area of materials science and engineering. This research will contribute to improving the general performance of advanced devices and integrated circuits used in computing, information processing, and telecommunications. ***

小行星9313371 将进行材料生长和处理----表面扩散、阶跃相互作用、外延----的基础研究，以了解和控制硅、锗和应变层合金薄膜晶体生长中的表面结构缺陷和表面形态和成分变化的动力学; STM结合电子（LEED）和X射线衍射将被用来提供完整的表征表面形态，以及研究在生长过程中的步骤重排的动力学。 图案化基板被开发并用作控制台阶分布的一种方式，其允许同时研究台阶密度的整个分布，而不必使用多个样品。 具有台阶密度分布的样品对于防止和/或控制三维成核和生长也具有积极的实际意义。 该计划的主要目标是发展表面扩散的基本理解，外延生长和锗和硅的相关处理的基本特征。 该计划的一个重要特点是在材料科学与工程的基础和技术重要领域对学生进行教育和培训。 这项研究将有助于提高用于计算，信息处理和电信的先进器件和集成电路的一般性能。 ***