Dissertation Enhancement in Japan: Experimental and Numerical Modeling of Czochralski Silicon Crystal Growth

WPC 2 B J Z 编号|X 高x 6 X @ '七 X @ 惠普LaserJet 4 HPLAS4.PRS X @ \ X @ 2 6 V Z 快递 ? x x x， 高x 6 X @ '七 X @ 惠普LaserJet 4 HPLAS4.PRS X @ \ X @ 2 * F Z : #|X 9317251丘吉尔在日本的论文增强：直拉硅晶体生长的实验和数值模拟该奖项将使维基布克，博士学位。他是宾夕法尼亚大学的研究生，与Koichi Kakimoto博士在日本筑波NEC公司的基础研究实验室进行为期六个月的合作研究。 通过在不同条件下实验性地生长硅晶体，该团队将测试Booker女士开发的硅晶体生长数值模型的准确性。 作为大多数电子设备的基础，硅基半导体对消费电子、电信和计算机行业至关重要。 高质量的硅衬底对于小规模电子器件的进一步发展和改进至关重要。 为了生产必要的高质量单晶硅晶体，生长这些晶体的主要技术，直拉法（CZ），必须更好地理解。 Booker女士开发了数值模型来描述CZ系统中的体相流体运动以及这种运动对生长晶体的影响，然而，该模型的准确性只能通过使用实验数据来验证。 通过与Kakimoto博士合作，Booker女士将利用Kakimoto博士的技术直接观察熔融硅中的体相流体运动，并提供数值模拟以帮助分析实验结果。 一个实验验证模型的直拉晶体生长系统将不仅有利于半导体工业，但也是广泛的材料开发工作的基础上单晶生长。

WPC 2 B J Z Courier #| x H x 6 X @ `7 X @ HP LaserJet 4 HPLAS4.PRS x @ \ X @ 2 6 V Z Courier ? x x x , H x 6 X @ `7 X @ HP LaserJet 4 HPLAS4.PRS x @ \ X @ 2 * F Z : #| x 9317251 Churchill Dissertation Enhancement in Japan: Experimental and Numerical Modeling of Czochralski Silicon Crystal Growth This award will enable Vicki Booker, a Ph.D. graduate student at the University of Pennsylvania, to conduct collaborative research with Dr. Koichi Kakimoto for six months at the Fundamental Research Laboratories, NEC Corporation, in Tsukuba, Japan. By experimentally growing silicon crystals under different conditions, the team will test the accuracy of numerical models developed by Ms. Booker for silicon crystal growth. As the basis of most electronic devices, silicon based semiconductors are essential to the consumer electronics, telecommunications, and computer industries. A high quality silicon substrate is crucial for further advancement and refinement of small scale electronic devices. In order to produce the necessary high quality single silicon crystals, the primary technique for growing these crystals, the Czochralski (CZ) method, must be better understood. Ms. Booker has developed numerical models to describe the bulk fluid motion in the CZ system and the effect of this motion on the growing crystal, however, the accuracy of this model is verifiable only through the use of experimental data. By working with Dr. Kakimoto, Ms. Booker will utilize Dr. Kakimoto's technique for directly observing bulk fluid motion in melting silicon and provide numerical simulation to aid in the analysis of the e xperimental results. An experimentally verified model for the Czochralski crystal growth system will benefit not only the semiconductor industry, but also a wide range of materials development efforts which are based on single crystal growth.