NSF Young Investigator

NSF 青年研究员

• 批准号: 9357506
• 负责人: Venkat Chandrasekhar
• 金额: $ 31.25万
• 依托单位: Northwestern University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-08-15 至 1999-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9357506&HistoricalAwards=false
• 关键词: NSF; Young; Investigator

9313726 Chandrasekhar This is an experimental research program focused on low temperature electron transport in nanofabricated systems in which strong electrostatic interactions between electrons lead to Coulomb blockade and single electron charging phenomena. The experiments are designed to increase fundamental understanding of the microscopic mechanism of electron transport in this regime, with emphasis on modifications introduced by quantum effects. The structures consist of short insulating wires placed between metallic contact electrodes. The goal is to understand the origin of the single electron charging effects that have been observed in this novel system. With an eye to potential device applications, different methods of increasing the temperature range over which the Coulomb blockade effects can be observed will be investigated by exploiting some unique properties of insulators. The project involves graduate students in research that is at the cutting edge of nanolithographic fabrication techniques. %%% This experimental project deals with the motion of individual electrons among ultrasmall structures that are fabricated by tracing patterns only a few atoms in width using a finely focused electron beam. The resulting structures show remarkable responses at low temperatures to applied electric and magnetic fields. The response arises from quantum effects that are only poorly understood in the structures under study. The ability of detection motion of a single electron has fundamental interest and is technologically significant as a route to the smallest microelectronics device currently envisioned. The project will employ insulating nanostructures which have potential for allowing operation of the microdevices at higher temperatures. ***

9313726 Chandrasekhar这是一个实验研究计划，专注于纳米复合材料系统中的低温电子传输，在该系统中，电子之间的强烈静电相互作用会导致库仑阻塞和单电子充电现象。这些实验旨在增加对这一区域中电子传输的微观机制的基本理解，重点是量子效应引入的修改。这种结构由放置在金属接触电极之间的短绝缘线组成。我们的目标是了解在这个新系统中观察到的单电子充电效应的起源。着眼于潜在的器件应用，将通过利用绝缘体的一些独特特性来研究提高库仑阻塞效应观察温度范围的不同方法。该项目让研究生参与研究处于纳米光刻制造技术前沿的研究。这个实验项目涉及单个电子在超微小结构中的运动，这些结构是通过使用精细聚焦的电子束跟踪宽度仅为几个原子的图案而制成的。由此得到的结构在低温下对外加电场和磁场表现出显著的响应。这种反应是由量子效应引起的，而量子效应在所研究的结构中知之甚少。探测单个电子运动的能力具有根本意义，作为目前设想的最小微电子设备的途径，具有重要的技术意义。该项目将采用绝缘纳米结构，这种结构有可能使微型设备在更高的温度下运行。***