Synthesis and Characterization of High Purity ZnGeP2

9361988 tsve ZnGeP2单晶具有突出的非线性和光学特性，使其成为光学参数振荡器和放大器的最有吸引力的候选，能够产生2.5至13 um区域的可调谐激光辐射。由于合成方法不能提供所需的精确化学计量学和高纯度，由于1到3 um之间的异常吸收，以及由于缺乏Zn-Ge-P系统的压力-温度-组成数据，阻碍了ZnGep2晶体的发展。在第一阶段，我们建议使用一种新的双温合成方法来制备在精确化学计量点上下不同成分的ZnGeP2样品，并对其进行精确元素组成、光透射率、晶格常数、电阻率和光电导率的表征。一个重要的目标将是了解1至3um吸收的性质，并找出如何消除它。

9361988 tsve ZnGeP2 single crystals have outstanding nonlinear and optical properties that make them the most attractive candidate for optical parametric oscillators and amplifiers capable of producing tunable laser radiation in the 2.5 to 13 um region. The development of ZnGep2 crystals has been hampered by synthesis methods that are not capable of providing the required precise stoichiometry and high purity, by an anomalous absorption between 1 and 3 um, and also by al lack of data on the pressure-temperature-composition of the Zn-Ge-P system. In Phase I we propose to use a new two-temperature synthesis to prepare ZnGeP2 samples o f varying composition above and below the exact stoichimetric point and to characterized them with respect to accurate elemental composition, optical transmission, lattice constants, resistivity and photoconductivity. An important objective will be to understand the nature of the 1 to 3 um absorption and to find out how to eliminate it.