SBIR Phase I: Growth of High Quality Optically Uniform CdGeAs2 Single Crystals by Horizontal Zone Melting

SBIR 第一阶段：通过水平区域熔化生长高质量光学均匀 CdGeAs2 单晶

• 批准号: 9960017
• 负责人: Ilya Zwieback
• 金额: $ 9.98万
• 依托单位: INRAD, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-01-01 至 2000-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9960017&HistoricalAwards=false
• 关键词: SBIR; Phase; Growth; Quality; Optically

This Small Business Innovation Research Phase I project proposes to develop a novel technique for the growth of CdGeAs2 single crystals based on Horizontal Zone Melting (HZM). CdGeAs2 has outstanding optical nonlinear properties, making it the best material for laser harmonic generation and tunable sources in the infrared. However, CdGeAs2 crystals grown by Horizontal Gradient Freeze have substantial optically non-uniform areas, which limits their use. The smaller volume of the melt and the axial symmetry of the thermal field of the HZM technique are expected to produce crystals of improved compositional uniformity.This project proposes to develop a growth technique based on HZM and apply it to the growth of CdGeAs2. CdGeAs2 single crystals will be grown and their optical transmission will be improved by irradiation with fast electrons. The crystal uniformity will be characterized using x-ray, electrical and optical measurements. Finally, HZM grown CdGeAs2 crystals of uniform composition and quality will be evaluated in an optical parametric oscillator to demonstrate tunable infrared radiation from 4 to 11 um.

这个小企业创新研究第一阶段项目提出开发一种基于水平区熔（HZM）生长CdGeAs 2单晶的新技术。CdGeAs 2具有出色的光学非线性特性，使其成为红外激光谐波产生和可调谐光源的最佳材料。 然而，通过水平梯度冷冻生长的CdGeAs 2晶体具有大量的光学不均匀区域，这限制了它们的使用。HZM技术的熔体体积小，热场轴对称，有望生产出成分均匀性更好的晶体。本项目提出开发基于HZM的生长技术，并将其应用于CdGeAs 2的生长。CdGeAs 2单晶将生长和它们的光传输将被改善与快电子辐照。 将使用X射线、电学和光学测量来表征晶体均匀性。 最后，HZM生长的CdGeAs 2晶体的均匀组成和质量将在光学参量振荡器中进行评估，以证明可调谐的红外辐射从4到11微米。