Electric-Field Effects in High Temperature Superconducting Thin Films

高温超导薄膜中的电场效应

• 批准号: 9404579
• 负责人: T. Venky Venkatesan
• 金额: $ 27万
• 依托单位: University of Maryland, College Park
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-07-15 至 1998-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9404579&HistoricalAwards=false
• 关键词: Electric; Field; Effects; Temperature; Superconducting

9404579 Venkatesan Technical abstract: Focus will be on the study of electric-field effects in high Tc superconducting thin films, a topic closely related to the development of three-terminal superconducting devices. The objective is to obtain a comprehensive assessment of the prospects for high Tc Supercccconducting Field-Effect Transistors (SuFET). Based on the existing data, two material problems have been identified as the limiting factors for the current device performance: the quality of the SrTiO3 (STO) dielectric layer and the quality of YBCO ultrathin films. In support of the project objective, work will be done in these two directions to improve the device properties. In addition to the study and optimization of the device characteristics experiments on unique SuFET applications, such as in SQUID circuits and microwave resonators will be continued and also extended to new device concepts. At the same time, the basic study of the physics of field effects in high Tc superconductors will continue. Non-technical abstract: The aim of the program is to investigate the effect of electric fields on the properties of the high temperature superconductors. It has been shown that by use of electric fields the transition temperature and the maximum current carrying ability of superconductors can be modified. Thus, one may be able to design novel devices where the device properties are modified by the use of electric fields. In order to understand the science as well as the full device potential of this phenomenon it is essential to fabricate high quality thin film based structures. One of the goals of this program is to understand and optimize the materials growth process. It is expected that a better understanding for the potential of three terminal superconducting devices will emerge from this program. ***

技术摘要：重点研究高Tc超导薄膜中的电场效应，这是一个与三端超导器件发展密切相关的课题。目的是对高Tc超导场效应晶体管（SuFET）的前景进行全面评估。基于现有数据，确定了SrTiO3 （STO）介电层质量和YBCO超薄膜质量两个材料问题是当前器件性能的限制因素。为了支持项目目标，将在这两个方向上进行工作，以提高器件的性能。除了在SQUID电路和微波谐振器等独特的SuFET应用中研究和优化器件特性实验外，还将继续并扩展到新的器件概念。同时，对高温超导体场效应物理的基础研究将继续进行。非技术摘要：该项目的目的是研究电场对高温超导体性质的影响。研究表明，利用电场可以改变超导体的转变温度和最大载流能力。因此，人们可能能够设计新颖的器件，其中通过使用电场来修改器件特性。为了了解这一现象的科学原理和充分的器件潜力，有必要制造高质量的薄膜基结构。这个项目的目标之一是了解和优化材料的生长过程。预计该项目将对三终端超导器件的潜力产生更好的理解。＊＊＊