New Cu(I) Precursors for CVD of Copper: An Investigation of the Gas Phase and Surface Chemistry

用于铜 CVD 的新型 Cu(I) 前体：气相和表面化学研究

• 批准号: 9107035
• 负责人: Mark Hampden-Smith
• 金额: $ 35.9万
• 依托单位: University of New Mexico
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-08-01 至 1995-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9107035&HistoricalAwards=false
• 关键词: New; Cu; Precursors; CVD; Copper

This collaborative award, made under the Materials Chemistry and Chemical Processing Initiative, is supported by the Divisions of Chemistry and Materials Research. A series of new copper(I) compounds will be prepared and evaluated for CVD based on criteria such as vapor pressure, deposition rate, deposit purity, morphology and resistivity. Precursors which deposit high-purity copper films will be the subject of surface studies to probe deposition mechanisms. These studies will focus on understanding the fundamental mechanistic aspects of CVD by means of Reactive Scattering and Thermal Desorption Mass Spectrometry, Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy. These techniques will be used to identify reaction products, to study modes of adsorption, binding energies and oxidation states of adsorbed species, and to examine adsorption/desorption kinetics, film homogeneity and impurity levels. %%% New methods of copper deposition are of great interest to the electronics industry. Understanding the surface chemistry as a function of the nature of the copper ligands will aid in the design of new molecular precursors that result in lower decomposition temperatures and higher purity films.

这个协作奖是在材料化学和化学加工倡议下颁发的，得到了化学和材料研究部门的支持。将制备一系列新的铜(I)化合物，并根据蒸汽压、沉积速度、沉积纯度、形貌和电阻率等标准对其进行评估。沉积高纯铜膜的前驱体将成为表面研究的对象，以探索沉积机理。这些研究将集中于通过反应散射和热解吸质谱、俄歇电子能谱和X射线光电子能谱来了解CVD的基本机理。这些技术将用于识别反应产物，研究吸附模式、结合能和被吸附物种的氧化态，并检查吸附/脱附动力学、膜的均匀性和杂质水平。新的铜沉积方法引起了电子工业的极大兴趣。了解铜配体性质对表面化学的影响将有助于设计新的分子前驱体，从而降低分解温度和提高膜的纯度。