SBIR Phase I: Hybrid Chemical Vapor Deposition (HCVD) for Synthesis of Copper and Silver Interconnects

这个小型企业创新研究(SBIR)第一阶段项目将使用一种新的化学气相沉积技术来合成半导体互连，该技术用于在用于100 nm以下CMOS器件的高纵横比图案化基板上沉积银和铜膜。这种被称为混合化学气相沉积的技术结合了传统化学气相沉积的优点，在低温工艺条件下实现了集成电路的超级填充，包括沟槽和通孔。该技术利用由金属纳米颗粒(金属颗粒尺寸：35纳米)制成的前体，这些纳米金属颗粒可以是使用适当的表面活性剂均匀分散的无机溶液。液体前驱体可以以雾的形式传输到图案化的晶片表面，在适当的低温热条件下，可以在表面形成一层金属的共形薄膜，该薄膜进一步聚集在气孔内，实现超级填充。对铜膜进行的初步工作已经显示出非常有希望的结果。该研究有望在微电子工业中得到应用。可靠互连的重要方面将有助于信号的完整性。混合化学气相沉积工艺的成功开发尚未见文献报道，这将是金属薄膜沉积工艺的一个重要进展。

This Small Business Innovation Research (SBIR) Phase I project will synthesize semiconductor interconnects by using a novel chemical vapor deposition technique for deposition of silver and copper films on high aspect ratio patterned substrates for sub 100 nm CMOS devices. This technique called hybrid chemical vapor deposition combines the advantages of conventional Chemical Vapor Deposition to achieve integrated circuit super filling, of trenches and vias under low temperature processing conditions. This technique utilizes precursors made with metallic nanoparticles (size of metallic particles: 35 nm) that can be uniformly dispersed inorganic solutions using appropriate surfactants. The liquid precursor can be transported to the patterned wafer surface in the form of mist and under appropriate low temperature thermal conditions can form a conformal film of metal on the surface, which further aggregates inside the pores to achieve super filling. Initial work conducted on copper films has shown very promising results. Application of the research is expected in microelectronics industry. The important are of reliable interconnects will help signal integrity. The successful development of hybrid chemical vapor deposition process has not yet been reported in the literature and would represent an important advancement in metal thin film deposition process.