SBIR Phase I: Hybrid Chemical Vapor Deposition (HCVD) for Synthesis of Copper and Silver Interconnects

SBIR 第一阶段：用于合成铜和银互连的混合化学气相沉积 (HCVD)

• 批准号: 0215066
• 负责人: Deepika Singh
• 金额: $ 9.99万
• 依托单位: SINMAT, INC.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-07-01 至 2002-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0215066&HistoricalAwards=false
• 关键词: SBIR; Phase; Hybrid; Chemical; Vapor

This Small Business Innovation Research (SBIR) Phase I project will synthesize semiconductor interconnects by using a novel chemical vapor deposition technique for deposition of silver and copper films on high aspect ratio patterned substrates for sub 100 nm CMOS devices. This technique called hybrid chemical vapor deposition combines the advantages of conventional Chemical Vapor Deposition to achieve integrated circuit super filling, of trenches and vias under low temperature processing conditions. This technique utilizes precursors made with metallic nanoparticles (size of metallic particles: 35 nm) that can be uniformly dispersed inorganic solutions using appropriate surfactants. The liquid precursor can be transported to the patterned wafer surface in the form of mist and under appropriate low temperature thermal conditions can form a conformal film of metal on the surface, which further aggregates inside the pores to achieve super filling. Initial work conducted on copper films has shown very promising results. Application of the research is expected in microelectronics industry. The important are of reliable interconnects will help signal integrity. The successful development of hybrid chemical vapor deposition process has not yet been reported in the literature and would represent an important advancement in metal thin film deposition process.

这个小企业创新研究（SBIR）第一阶段项目将使用一种新的化学气相沉积技术来合成半导体互连，该技术用于在低于100纳米的CMOS器件的高纵横比图案衬底上沉积银和铜薄膜。这种被称为混合化学气相沉积的技术结合了传统化学气相沉积的优点，在低温加工条件下实现了沟槽和通孔的集成电路超级填充。该技术利用由金属纳米颗粒（金属颗粒尺寸：35纳米）制成的前体，可以使用适当的表面活性剂均匀分散无机溶液。液体前驱体以雾状的形式被输送到图案化的晶圆表面，在适当的低温热条件下可在表面形成金属共形膜，其进一步聚集在孔内，实现超填充。在铜薄膜上进行的初步工作显示出非常有希望的结果。该研究有望在微电子工业中得到应用。重要的是可靠的互连将有助于信号的完整性。混合化学气相沉积工艺的成功开发尚未见文献报道，这将是金属薄膜沉积工艺的重要进展。