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Optically Detected Magnetic Resonance Studies of Ternary Chalcopyrite Semiconductors

Optically Detected Magnetic Resonance Studies of Ternary Chalcopyrite Semiconductors
三元黄铜矿半导体的光学检测磁共振研究
批准号:
9409276
负责人:
Nancy Giles
金额:
$5.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1994
资助国家:
美国
项目状态:
已结题
起止时间:
1994-07-15 至 1995-12-31

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中文摘要
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英文摘要
Optically detected resonance (ODMR) will be applied to a study of point defects in two ternary chalcopyrites (silver gallium selenide and zinc germanium phosphide). These semiconductors have been identified as primary candidates for frequency-conversion applications in the near and mid-infrared wavelength regions. The proposed studies will help to identify and characterize the point defects responsible for unwanted optical absorption bands in the range from 0.7 to 2.0 microns in these materials. Nonlinear optical materials are used in tunable infrared laser systems. Two prime candidates, silver gallium selenide and zinc germanium phosphide, have met limited success due to defects which produce optical absorption bands. Optical spectroscopic techniques which allow atomic scale resolution will be applied to characterize the defects.
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Acquisition of an Electron Paramagnetic Resonance Spectrometer for Point Defect Studies of Semiconductors
Acquisition of Equipment for the Study of Defects in II-VI Semiconductor Materials
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