Acquisition of an Electron Paramagnetic Resonance Spectrometer for Point Defect Studies of Semiconductors

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9802899 Giles This electron paramagnetic resonance (EPR) spectrometer will allow the principal investigator to identify and characterize device-limiting point defects in bulk and epitaxial II-VI semiconductors. EPR is a sensitive, high resolution spectroscopic technique which is used to probe the symmetry and electronic structure of point defects through measurement of the g matrix and hyperfine parameters. Examples of point defects which can be studied by EPR are acceptors, donors, vacancies, interstitials, antisites, and transition-metal impurities. Using a commercial EPR spectrometer, the minimum detectable number of spins is approximately 2 x 1010 at room temperature for a 1 gauss linewidth. The sensitivity is further improved by cooling the sample to liquid helium temperatures. This ability to monitor small concentrations of point defects makes EPR an excellent tool for use in research programs that are developing the next generation of semiconductor devices. %%% ***