Acquisition of an Electron Paramagnetic Resonance Spectrometer for Point Defect Studies of Semiconductors

购买用于半导体点缺陷研究的电子顺磁共振波谱仪

• 批准号: 9802899
• 负责人: Nancy Giles
• 金额: $ 11.36万
• 依托单位: West Virginia University Research Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-05-15 至 1999-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9802899&HistoricalAwards=false
• 关键词: Acquisition; Electron; Paramagnetic; Resonance; Spectrometer

9802899 Giles This electron paramagnetic resonance (EPR) spectrometer will allow the principal investigator to identify and characterize device-limiting point defects in bulk and epitaxial II-VI semiconductors. EPR is a sensitive, high resolution spectroscopic technique which is used to probe the symmetry and electronic structure of point defects through measurement of the g matrix and hyperfine parameters. Examples of point defects which can be studied by EPR are acceptors, donors, vacancies, interstitials, antisites, and transition-metal impurities. Using a commercial EPR spectrometer, the minimum detectable number of spins is approximately 2 x 1010 at room temperature for a 1 gauss linewidth. The sensitivity is further improved by cooling the sample to liquid helium temperatures. This ability to monitor small concentrations of point defects makes EPR an excellent tool for use in research programs that are developing the next generation of semiconductor devices. %%% ***

9802899 Giles 这种电子顺磁共振 (EPR) 波谱仪将使主要研究人员能够识别和表征块体和外延 II-VI 半导体中的器件限制点缺陷。 EPR 是一种灵敏的高分辨率光谱技术，用于通过测量 g 矩阵和超精细参数来探测点缺陷的对称性和电子结构。 可以通过 EPR 研究的点缺陷的例子有受主、施主、空位、填隙、反位点和过渡金属杂质。 使用商用 EPR 光谱仪，在室温下，对于 1 高斯线宽，最小可检测自旋数约为 2 x 1010。 通过将样品冷却至液氦温度，灵敏度进一步提高。 这种监测小浓度点缺陷的能力使 EPR 成为开发下一代半导体器件的研究项目的绝佳工具。 %%% ***