Acquisition of Equipment for the Study of Defects in II-VI Semiconductor Materials

II-VI族半导体的带隙范围为 从紫外线到远红外线，创造了 形成各种电子和 光电子器件. II-VI半导体并不像 作为其III-V对应物开发，主要是因为 在理解和控制方面遇到的困难 生长过程中产生的缺陷。 该提案是为 购置设备以解决以下共同问题： 宽禁带II-VI族半导体中的缺陷。 解决 这个问题，我们建议（1）建立一个自定义的分子 带现场仪器的束流激励系统， 研究生长动力学;（2）组装高分辨率 低温光谱系统 光致发光和拉曼光谱使用双 单色器和可调谐激光系统;以及（3）组装一个 光学检测的磁共振系统， 点缺陷的磁共振识别 半导体 磁共振实验将 涉及使用双单色器和可调谐激光器 系统，除了具有光学 接入和相关的微波桥。 收购 建议的设备允许原始研究，以改善 理解光、电、磁和 这些困难材料的缺陷特性。 在 将特别强调 了解生长机制之间的关系 以及这些材料中的缺陷形成，从而导致 改善和更好地控制基本性能。 这台设备将立即有助于研究 三位主要研究者的研究成果。 计划 研究工作将涉及两名博士后科学家 以及六个或更多的研究生。 一直是 研究人员的做法，包括本科生，因此， 预计该设备还将影响 每年两到三个本科生的职业生涯。

The II-VI semiconductors feature bandgaps ranging from the ultraviolet to the far infrared, creating the potential to form the basis of a wide variety of electronic and optoelectronic devices. II-VI semiconductors are not as developed as their III-V counterparts, primarily because of difficulties encountered in understanding and controlling defects arising during growth. This proposal is for acquisition of equipment to address the common problem of defects in wide bandgap II-VI semiconductors. To address this problem, we propose to (1) build a custom Molecular Beam Enitaxy system with in-situ instrumentation to investigate growth kinetics; (2) assemble a high resolution optical spectroscopy system for low temperature photoluminescence and Raman spectroscopy using a double monochromator and tunable laser system; and (3) assemble an optically detected magnetic resonance system which allows magnetic resonance identification of point defects in semiconductors. The magnetic resonance experiments will involve use of the double monochromator and tunable laser system, in addition to a 4 Tesla magnet dewar with optical access and associated microwave bridge. Acquisition of the proposed equipment allows original research to improve the understanding of the optical, electrical, magnetic, and defect properties of these difficult materials. In particular, special emphasis will be placed on understanding the relationship between growth mechanisms and defect formation in these materials, thus leading to both improvement and better control of basic properties. This equipment will immediately contribute to the research programs of the three principal investigators. The planned research efforts will involve two postdoctoral scientists and six or more graduate students. It has always been the practice of investigators to include undergraduates, thus it is anticipated that this equipment will also influence the career of two to three undergraduates each year.