Acquisition of Equipment for the Study of Defects in II-VI Semiconductor Materials

购置 II-VI 族半导体材料缺陷研究设备

• 批准号: 9214350
• 负责人: Nancy Giles
• 金额: $ 30万
• 依托单位: West Virginia University Research Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-10-01 至 1995-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9214350&HistoricalAwards=false
• 关键词: Acquisition; Equipment; Study; Defects; II

The II-VI semiconductors feature bandgaps ranging from the ultraviolet to the far infrared, creating the potential to form the basis of a wide variety of electronic and optoelectronic devices. II-VI semiconductors are not as developed as their III-V counterparts, primarily because of difficulties encountered in understanding and controlling defects arising during growth. This proposal is for acquisition of equipment to address the common problem of defects in wide bandgap II-VI semiconductors. To address this problem, we propose to (1) build a custom Molecular Beam Enitaxy system with in-situ instrumentation to investigate growth kinetics; (2) assemble a high resolution optical spectroscopy system for low temperature photoluminescence and Raman spectroscopy using a double monochromator and tunable laser system; and (3) assemble an optically detected magnetic resonance system which allows magnetic resonance identification of point defects in semiconductors. The magnetic resonance experiments will involve use of the double monochromator and tunable laser system, in addition to a 4 Tesla magnet dewar with optical access and associated microwave bridge. Acquisition of the proposed equipment allows original research to improve the understanding of the optical, electrical, magnetic, and defect properties of these difficult materials. In particular, special emphasis will be placed on understanding the relationship between growth mechanisms and defect formation in these materials, thus leading to both improvement and better control of basic properties. This equipment will immediately contribute to the research programs of the three principal investigators. The planned research efforts will involve two postdoctoral scientists and six or more graduate students. It has always been the practice of investigators to include undergraduates, thus it is anticipated that this equipment will also influence the career of two to three undergraduates each year.

II-VI半导体具有从紫外到远红外的带隙，创造了形成各种电子和光电子器件基础的潜力。II-VI类半导体不如III-V类半导体发达，主要是因为在理解和控制生长过程中产生的缺陷方面遇到了困难。本提案是为解决宽带隙II-VI半导体缺陷的常见问题而购置的设备。为了解决这个问题，我们建议(1)建立一个定制的分子束Enitaxy系统，并配备原位仪器来研究生长动力学；(2)采用双单色可调激光系统组装低温光致发光和拉曼光谱的高分辨率光谱系统；(3)组装一种光学检测磁共振系统，该系统允许对半导体中的点缺陷进行磁共振识别。磁共振实验将使用双单色仪和可调谐激光系统，此外还有一个带有光学通道和相关微波桥的4特斯拉磁杜瓦。获得拟议的设备可以进行原始研究，以提高对这些困难材料的光学，电学，磁性和缺陷特性的理解。特别是，特别强调将放在理解这些材料的生长机制和缺陷形成之间的关系，从而导致改进和更好地控制基本性能。该设备将立即为三位主要研究人员的研究项目做出贡献。计划的研究工作将涉及两名博士后科学家和六名或更多的研究生。一直以来，研究人员的做法是将本科生包括在内，因此预计该设备每年也将影响两到三名本科生的职业生涯。