Research Initation Award: Improved Modeling of Ultra-fast Semiconductor Devices Using the Hydro-kinet Transport Theory

[409471] Cheng本项目的目标是改进现有的流体动力学输运模型，开发单谷和多谷带结构中非平衡/热电子能量/动量分布函数的有效方法，研究小尺度下器件运行的基本输运现象和局限性，探索新的器件结构，提高器件性能。该方法基于在玻尔兹曼（动力学）输运方程和水动力学方程之间插入的“水动力学”分布的概念。所开发的模型可以适当地解释效应，这些效应从未成功地包括在高速半导体器件的建模中。此外，高效的流体动力学方法可用于分析与热电子现象相关的场效应晶体管栅极电流、异质结之间的电子注入和器件可靠性。该项目的成功将导致对这些影响的新理解，并将带来新的概念和结构，以提高设备的性能和可靠性。＊＊＊

9409471 Cheng The objectives of this project are to improve existing hydrodynamic transport models, to develop efficient approaches to nonequilibrium/hot-electron energy/momentum distribution functions in single-and multi-valley bandstructures, to study the fundamental transport phenomena and limitations of device operation at small scales, to explore new device structures, and to improve device performance. The approach is based on the concept of a "hydro-kinetic" distribution which is interpolated between the Boltzmann (kinetic) transport equation and hydro-dynamic equations. The developed models can properly account for effects, which have never been successfully included in modeling high-speed semiconductor devices. In addition, the efficient hydro-kinetic approach is useful of analysis of FET gate current, electron injection between heterojunctions, and device reliability, associated with hot-electron phenomena. Success of this proposed project will result in a new understanding of these effects and will bring in new concepts and structures to improve device performance and reliability. ***