RUI: Reflection High Energy Electron Diffraction Profile Analysis for the Growth of Wide-Gap II-VI Semiconductors

RUI：宽禁带 II-VI 半导体生长的反射高能电子衍射剖面分析

• 批准号: 9413322
• 负责人: Shyang Huang
• 金额: --
• 依托单位: Missouri State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-08-01 至 1997-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9413322&HistoricalAwards=false
• 关键词: RUI; Reflection; Energy; Electron; Diffraction

9413322 Hwang This project seeks to achieve an understanding of the relationship between kinetic roughening and native defect formation in wide-gap II-VI semiconductors. Kinetic roughening results from the stochastic nature of the growth process and may lead to loss of control over surface stoichiometry. Research towards the construction of a kinetic phase diagram that correlates the degree of roughening and growth parameters will be conducted. Such a diagram allows various growth conditions to be systematically explored so that optimal growth parameters can be identified. The application of statistical physics and surface physics to the study of defect formation is expected to provide new insight into the issue of dopant compensation as well as the kinetic processes on growing surfaces. %%% This project addresses the issue of dopant compensation in wide-gap II-VI semiconductors from a surface physics point of view. The goal of the research is to establish a relationship between kinetic roughening and dopant incorporation for a class of materials that are being employed to develop blue semiconductor lasers. Currently, doping control remains to be the main challenge, and it is expected that the results of this research will have an impact on the fabrication of these devices, and will contribute to improving the general perform ance of advanced devices and integrated circuits used in computing, information processing, and tele communica tions.

本项目旨在了解宽间隙II-VI半导体中动力学粗化与原生缺陷形成之间的关系。动力学粗化源于生长过程的随机性质，并可能导致对表面化学计量的控制丧失。将研究建立一个与粗化程度和生长参数相关的动力学相图。这样的图表允许系统地探索各种生长条件，以便确定最佳生长参数。统计物理学和表面物理学在缺陷形成研究中的应用有望为掺杂补偿问题以及生长表面的动力学过程提供新的见解。本项目从表面物理学的角度解决了宽间隙II-VI半导体中掺杂补偿的问题。该研究的目标是为一类用于开发蓝色半导体激光器的材料建立动力学粗化和掺杂之间的关系。目前，兴奋剂控制仍然是主要的挑战，预计本研究的结果将对这些器件的制造产生影响，并将有助于提高用于计算，信息处理和远程通信的先进器件和集成电路的总体性能。