NSF/ONR: Atomic Layer Epitaxy of Superconducting Oxides and Heterostructures

在这个项目中，ONR/NSF接口联合计划的一部分， 超导体和支持的化学，材料， 研究，电气和通信系统，张教授和 西北大学的马克斯正在研究 高温薄膜界面生长区 超导（HTS）材料和绝缘金属氧化物。 原子 层外延（ALE）将使用脉冲有机金属束 一种外延系统，其能够生长具有原子 层的精度，但也适应大规模的低温 根据制造中的需要生长适形的金属氧化物膜。 超导体/绝缘体异质结构将在一个 各种生长条件和微观结构以及相互扩散 性能将通过各种物理技术进行评估， 包括各种电子和原子力显微镜。 表面 化学过程将作为生长的函数被直接监测 在ALE期间。 改善高温超导界面的性质 材料和绝缘金属氧化物是一个至关重要的屏障，必须 在高温超导材料能够成功地结合在一个 大规模进入电子设备技术。 本研究将提供 制造基于HTS的关键结构所需的信息 电子和不同的潜在的准确评估 在这个竞技场的成长技术。

In this project, part of the joint ONR/NSF Program on Interfaces to Superconductors and supported by the Divisions of Chemistry, Materials Research, and Electrical and Communications Systems, Professors Chang and Marks of Northwestern University are studying the properties of interfacial growth regions between films of high-temperature superconducting (HTS) materials and insulating metal oxides. Atomic layer epitaxy (ALE) will be employed using a pulsed organometallic beam epitaxy system which is capable of growing metal oxide films with atomic layer precision but is also adaptable to large-scale low-temperature conformable metal oxide films growth as required in manufacturing. Superconductor/insulator heterostructures will be investigated under a variety of growth conditions and microstructures and interdiffusion properties will be evaluated by a variety of physical techniques, including various electron and atomic-force microscopies. Surface chemical processes will be directly monitored as a function of growth conditions during ALE. Improving the nature of interfaces in high-temperature superconducting materials and insulating metal oxides is a crucial barrier which must be surmounted before HTS materials can be successfully incorporated on a large scale into electronic device technologies. This study will provide the information needed to fabricate key structures for HTS-based electronics and an accurate evaluation of the potential of different growth techniques in this arena.