Atomic Layer Epitaxy of Conducting Oxides and Heterostructures

这项由化学系先进材料计划和材料研究部电子材料计划颁发给西北大学的联合奖项旨在合成新的大环含氮聚酮/聚酮亚胺络合物以及具有极性金属-碳和金属-氮键的金属烷基和二烷胺，用作传统的脉冲金属有机束外延和原子层外延薄膜生长工艺的前驱体。凭借这一奖项，Chang教授和Marks教授将研究前体的分子结构-挥发性-热稳定性-表面反应性关系，从而获得更有效的前体。利用精密脉冲气相沉积技术，这些前驱体将生长出透明的导电氧化物薄膜，这些薄膜将在平板显示器和光伏器件中具有潜在的应用前景。我们将研究晶格匹配的氧化掺杂立方薄膜系统，通过在自组装的单层模板上进行气相沉积来制备高效的p型导体薄膜，以产生所需的薄膜微结构、光学和电学功能。这项高度合作的工作将把材料科学和化学研究小组聚集在一起，为研究生和博士后提供教育和研究机会。获得这一奖项后，将制备具有极性金属-碳和金属-氮键的新型前驱体，用于传统和精密脉冲气相沉积工艺，以制备透明导电氧化物薄膜。这些前驱体有望具有最佳的分子结构、挥发性、热稳定性和表面反应性，可用于沉积透明的导电氧化物薄膜。还将通过软光刻和无位错岛的共格生长来制备亚微米和纳米级的氧化膜图案。

This joint award made to Northwestern University by the Advanced Materials Program in the Division of Chemistry (MPS) and the Electronic Materials Program in the Division of Materials Research (MPS) is to synthesize new macrocyclic nitrogenous polyketonato/polyketoiminato complexes as well as metal alkyls and dialkylamides with polar metal-carbon and metal-nitrogen linkages for use as precursors in conventional, pulsed organometallic beam epitaxy, and atomic layer epitaxy film growth processes. With this award, Professors Chang and Marks will study precursor molecular architecture-volatility-thermal stability-surface reactivity relationships leading to more effective precursors. Transparent thin films of conducting oxides will be grown from these precursors using precision-pulsed vapor deposition techniques, and these thin films would have potential applications in flat-panel display and photovoltaic devices. Lattice-matched cubic film systems with oxidative dopants will be studied for producing efficient p-type conductor films using vapor phase deposition onto self-assembled monolayer templates to create desired film microstructural, optical and electrical functionalities. This highly collaborative effort will bring together materials science and chemistry research groups with educational and research opportunities for graduate and postdoctoral students.With this award, novel precursors with polar metal-carbon and metal-nitrogen linkages will be prepared for use in conventional and precision-pulsed vapor deposition processes to prepare transparent thin films of conducting oxides. These precursors are expected to possess optimum molecular architecture, volatility, thermal stability and surface reactivity for the deposition of transparent thin films of conducting oxides. Sub-micrometer and nanometer scale patterns of the oxide films by soft lithography and coherent growth of dislocation-free islands will also be prepared.