Application of RTCVD to MEMS Processing

9422338 Mehregany将为MEMS加工采购一套快速热化学气相沉积（RTCVD）系统。 与低压化学气相沉积（LPCVD）相比，RTCVD为多晶硅、二氧化硅和氮化硅提供更高的沉积速率。 因此，本提案要求50，000美元的设备资金，以构建用于MEMS处理的快速热化学气相沉积（RTCVC）系统。 与低压化学气相沉积（LPCVD）相比，RTCVD为多晶硅、二氧化硅和氮化硅提供更高的沉积速率。 因此，单晶片加工和沉积较厚的薄膜成为RTCVD的两个重要的实用功能。 这两个特征对于MEMS加工都是有价值的。 前者能够快速原型化的想法，后者提供了增强的设备设计灵活性。 此外，与RTCVD相关的低热预算使得能够开发集成MEMS工艺，其中在具有电子器件的晶片上进行微加工，在微加工步骤之前制造或与微加工步骤混合。 ***

9422338 Mehregany A rapid thermal chemical vapor deposition (RTCVD) system will be purchased for MEMS Processing. RTCVD provides higher deposition rates for polysilicon, silicon dioxide and silicon nitride in comparison with low pressure chemical vapor deposition (LPCVD). As a result this proposal requests $50,000 in equipment funds to construct a rapid thermal chemical vapor deposition (RTCVC) system for MEMS processing. RTCVD provides higher deposition rates for polysilicon, silicon dioxide, and silicon nitride in comparison with low pressure chemical vapor deposition (LPCVD). As a result, single-wafer processing and deposition of thicker films become two important practical features of RTCVD. Both of these features are valuable for MEMS processing. The former enables rapid prototyping of ideas and the latter provides for enhanced device design flexibility. Additionally, the low thermal budget associated with RTCVD enables development of integrated MEMS processes in which micromachining is carried out on wafers with electronics, fabricated prior to or mixed in with the micromachining steps. ***