Application of RTCVD to MEMS Processing

RTCVD在MEMS加工中的应用

• 批准号: 9422338
• 负责人: Mehran Mehregany
• 金额: $ 5万
• 依托单位: Case Western Reserve University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-10-01 至 1996-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9422338&HistoricalAwards=false
• 关键词: Application; RTCVD; MEMS; Processing

9422338 Mehregany A rapid thermal chemical vapor deposition (RTCVD) system will be purchased for MEMS Processing. RTCVD provides higher deposition rates for polysilicon, silicon dioxide and silicon nitride in comparison with low pressure chemical vapor deposition (LPCVD). As a result this proposal requests $50,000 in equipment funds to construct a rapid thermal chemical vapor deposition (RTCVC) system for MEMS processing. RTCVD provides higher deposition rates for polysilicon, silicon dioxide, and silicon nitride in comparison with low pressure chemical vapor deposition (LPCVD). As a result, single-wafer processing and deposition of thicker films become two important practical features of RTCVD. Both of these features are valuable for MEMS processing. The former enables rapid prototyping of ideas and the latter provides for enhanced device design flexibility. Additionally, the low thermal budget associated with RTCVD enables development of integrated MEMS processes in which micromachining is carried out on wafers with electronics, fabricated prior to or mixed in with the micromachining steps. ***

9422338 Mehregany 将购买快速热化学气相沉积 (RTCVD) 系统用于 MEMS 处理。 与低压化学气相沉积 (LPCVD) 相比，RTCVD 可为多晶硅、二氧化硅和氮化硅提供更高的沉积速率。 因此，该提案要求 50,000 美元的设备资金来构建用于 MEMS 处理的快速热化学气相沉积 (RTCVC) 系统。 与低压化学气相沉积 (LPCVD) 相比，RTCVD 可为多晶硅、二氧化硅和氮化硅提供更高的沉积速率。 因此，单晶圆加工和较厚薄膜的沉积成为RTCVD的两个重要实用特征。 这两个特性对于 MEMS 处理都很有价值。 前者支持快速原型设计，后者提供增强的设备设计灵活性。 此外，与 RTCVD 相关的低热预算使得集成 MEMS 工艺的开发成为可能，其中微机械加工是在带有电子器件的晶圆上进行的，这些电子器件在微机械加工步骤之前制造或与微机械加工步骤混合。 ***