Buried Layer Interconnect Technology for III-V Based Devices

适用于 III-V 族器件的埋层互连技术

• 批准号: 9461613
• 负责人: Keith Jamison
• 金额: $ 6.47万
• 依托单位: SI Diamond Technology, Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-02-01 至 1995-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9461613&HistoricalAwards=false
• 关键词: Buried; Layer; Interconnect; Technology; III

SI Diamond Technology, Inc., proposes to develop a novel buried layer interconnect technology, based on the integration of the group V Sb with the III-V semiconductor family. The remarkable compatibility of Sb with the III-V semiconductors in a heterostructure is a consequence of the nearly identical atomic surface nets in the (111) planes of each crystal. The technology will provide the first true capability to produce ultra low resistance buried interconnects, combined with undegraded semiconductor overgrowth capability, therefore providing a technology for three-dimensional circuit architectures and new generation devices such as high speed metal based transistors. An interconnect capability, based on elementary GaSb/Sb/GaSb multilayers will be demonstrated in Phase I. Devices, including a metal-based transistor will be produced in Phase II.

SI Diamond Technology，Inc.提出了开发一种新的埋层互连技术，基于V族Sb与III-V族半导体家族的集成。Sb与异质结构中的III-V族半导体的显著相容性是每个晶体的（111）平面中几乎相同的原子表面网络的结果。该技术将提供第一个真正的能力，以生产超低电阻掩埋互连，结合未退化的半导体过生长能力，因此提供了一种技术，三维电路架构和新一代器件，如高速金属基晶体管。第一阶段将展示基于基本GaSb/Sb/GaSb多层膜的互连能力。包括金属基晶体管在内的器件将在第二阶段生产。