Buried Layer Interconnect Technology for III-V Based Devices

SI Diamond Technology, Inc.提出开发一种基于V族Sb与III-V族半导体集成的新型埋层互连技术。Sb与III-V型半导体在异质结构中的显著相容性是由于每个晶体（111）面的原子表面网几乎相同的结果。该技术将提供第一个真正生产超低电阻埋地互连的能力，结合不退化的半导体过生长能力，因此为三维电路架构和新一代器件（如高速金属基晶体管）提供了一种技术。第一阶段将展示基于初级GaSb/Sb/GaSb多层的互连能力。第二阶段将生产器件，包括金属基晶体管。

SI Diamond Technology, Inc., proposes to develop a novel buried layer interconnect technology, based on the integration of the group V Sb with the III-V semiconductor family. The remarkable compatibility of Sb with the III-V semiconductors in a heterostructure is a consequence of the nearly identical atomic surface nets in the (111) planes of each crystal. The technology will provide the first true capability to produce ultra low resistance buried interconnects, combined with undegraded semiconductor overgrowth capability, therefore providing a technology for three-dimensional circuit architectures and new generation devices such as high speed metal based transistors. An interconnect capability, based on elementary GaSb/Sb/GaSb multilayers will be demonstrated in Phase I. Devices, including a metal-based transistor will be produced in Phase II.