International Postdoctoral Fellows Program: Development andRealization of High Temperature Integrated Sensor Amplifiersin 6H and 3C Silicon Carbide

国际博士后项目：6H和3C碳化硅高温集成传感器放大器的开发与实现

• 批准号: 9507123
• 负责人: Scott Sheppard
• 金额: $ 4.38万
• 依托单位: Individual Award
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-09-01 至 1996-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9507123&HistoricalAwards=false
• 关键词: International; Postdoctoral; Fellows; Program; Development

9507123 Sheppard The International Junior Investigator and Postdoctoral Fellows Program enables U.S. scientists and engineers to conduct three to twenty-four months of research abroad. The program's awards provide opportunities for joint research, and the use of unique or complementary facilities, expertise and experimental conditions abroad. This award will support a twelve-month postdoctoral research visit by Dr. Scott T. Sheppard to work with Dr. Ekkehard Niemann at the Research Institute of Daimler Benz AG in Frankfurt, Germany. This research project will develop silicon carbide (SiC) integrated circuit technology for integration with SiC microsensors being developed at Daimler-Benz. The general goal is a smart sensor technology, which is a combination of a semiconductor microsensor (pressure, acceleration, deflection) and its corresponding driving and readout circuit. The research will be done in three steps: 1) Development and verification of new SPICE circuit models for SiC up to 500 degrees Celsius; 2) Implementation of new SPICE models to investigate different types of amplifier circuits in SiC; and 3) Fabrication and demonstration of a prototype IC amplifier suitable for integration with microsensor tranducers and UV photodiodes. ***

小行星9507123 国际初级研究员和博士后研究员计划使美国科学家和工程师能够在国外进行三到二十四个月的研究。该计划的奖项提供了联合研究的机会，以及使用国外独特或互补的设施，专业知识和实验条件。 该奖项将支持博士斯科特T。谢泼德与博士埃克哈德尼曼在研究所戴姆勒奔驰股份公司在法兰克福，德国。 该研究项目将开发碳化硅（SiC）集成电路技术，用于与戴姆勒-奔驰正在开发的SiC微传感器集成。 总的目标是智能传感器技术，它是半导体微传感器（压力，加速度，偏转）及其相应的驱动和读出电路的组合。 该研究将分三个步骤进行：1）开发和验证SiC的新SPICE电路模型，最高可达500摄氏度; 2）实施新SPICE模型，以研究SiC中不同类型的放大器电路; 3）制造和演示适合与微传感器换能器和UV光电二极管集成的原型IC放大器。***