The Role of Hydrogen in Controlled Growth and Design of Low-Temperature Electronic Materials

9509790波兰德本研究项目旨在对低温化学气相沉积(CVD)的化学原理有一个基本的了解，重点是氢在硅CVD中的作用。变温扫描隧道显微镜(VT-STM)的应用和STM固有的原子分辨能力在不同的操作和温度范围内将提供对生长表面的实时动力学的访问。将研究硅-氢表面化学的基本机制及其在促进低温生长中的作用，以及氢原子在控制表面扩散和相关过程中的活动，以促进低温外延。%本研究项目的主要目标是加深对电子材料薄膜合成和加工至关重要的特殊现象的基本理解，并将这种理解与通过改进加工方法开发先进的微电子设备相联系。此外，该计划的一个重要特点是在一个重要的基础和技术领域对研究生和本科生进行培训。从这项研究项目中获得的知识和理解预计将总体上有助于提高用于计算、信息处理和电信的先进设备的性能。***

9509790 Boland This research project aims for fundamental understanding of the chemistry of low temperature chemical vapor deposition(CVD), with emphasis on the role of hydrogen in silicon CVD. The application of variable temperature scanning tunneling microscope (VT-STM) and inherent atom-resolved capabilities of STM with different operation and temperature ranges will provide access to real-time dynamics on the growth surface. Basic mechanisms of silicon-hydrogen surface chemistry and its role in promoting low temperature growth as well as the activities of hydrogen atoms in controlling surface diffusion and related processes at reduced temperatures to enhance epitaxy will be studied. %%% The primary goal of this research project is to establish greater basic understanding of particular phenomena critical to thin film synthesis and processing of electronic materials, and to relate this understanding to the development of advanced microelectronics devices through modifications in processing methods. Additionally, an important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area. The knowledge and understanding gained from this research project is expected to contribute generally to improving the performance of advanced devices used in computing, information processing, and telecommunications. ***