Growth and Characterization of MOVPE III-V Semiconductors Doped With Rare Earths

9510139布雷这个合作，跨学科的研究项目侧重于稀土掺杂的III-V半导体的制备和表征;这些材料提供了结合半导体提供的电激发的便利性与稀土离子的温度稳定的尖锐线发光功能的潜力。MOVPE薄膜生长研究的目标是确定获得最佳稀土离子浓度所需的条件，而不会导致掺杂剂沉淀或材料质量或性能下降。表征研究将强调所提出的系统的光学和电学性质的生长过程中的关系。光学研究将包括光致发光、电致发光、发光寿命、发光激发、吸收和近场扫描光学显微镜测量。这些研究试图阐明稀土激发和热猝灭的机制。将进行高压研究，以研究能带结构对所提出的系统的发光特性的影响，并且还将用于确定稀土能级相对于所提出的半导体的能带边缘的对准。在电致发光研究中发现有前途的系统将被制造成二极管和波导结构，并测试它们在这些应用中的适用性。该计划的主要目标是发展的电子和光子特性和稀土掺杂半导体材料的外延生长和加工的基本理解，使它们可以在各种先进的电子和光子器件的实现利用。该计划的一个重要特点是在材料和加工研究的基本和技术重要领域培养研究生和本科生。 这项研究将有助于提高先进的设备和集成电路在计算，信息处理和电信的一般性能。 ***

9510139 Bray This collaborative, interdisciplinary research project focuses on the preparation and characterization of rare earth doped III-V semiconductors; these materials provide the potential of combining the convenience of electrical excitation offered by semiconductors with the temperature stable sharp line luminescence features of rare earth ions. The goal of MOVPE film growth studies is to identify the conditions necessary to obtain optimal concentrations of rare earth ions without dopant precipitation or degradation of materials quality or properties. Characterization studies will emphasize the relationship of the optical and electrical properties of the proposed systems to the growth process. Optical studies will include photoluminescence, electroluminescence, luminescence lifetime, luminescence excitation, absorption and near field scanning optical microscopy measurements. These studies seek to elucidate mechanisms of rare earth excitation and thermal quenching. High pressure studies will be conducted to study the effect of band structure on the luminescence properties of the proposed systems, and will also be used to determine the alignment of rare earth energy levels relative to the band edges of the proposed semiconductors. Systems found to be promising in electroluminescence studies will be fabricated into diode and waveguide structures and tested for their suitability in these applications. %%% The primary goal of this program is to develop a fundamental understanding of the electronic and photonic properties and the epitaxial growth and processing of rare-earth doped semiconductor materials so that they can be exploited in the realization of a variety of advanced electronic and photonic devices. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general performance of advanced devices and integr ated circuits used in computing, information processing, and telecommunications. ***