Growth and Characterization of MOVPE III-V Semiconductors Doped With Rare Earths

9510139 B这个合作的跨学科研究项目专注于稀土掺杂III-V半导体的制备和表征；这些材料提供了将半导体提供的电激发便利与稀土离子的温度稳定的锐线发光特性相结合的潜力。MOVPE薄膜生长研究的目标是确定在没有掺杂沉淀或材料质量或性能退化的情况下获得最佳稀土离子浓度所需的条件。表征研究将强调所建议系统的光学和电学性质与生长过程的关系。光学研究将包括光致发光、电致发光、发光寿命、发光激发、吸收和近场扫描光学显微镜测量。这些研究试图阐明稀土激发和热猝灭的机理。将进行高压研究，以研究能带结构对拟议系统发光性能的影响，并将用于确定稀土能级相对于拟议半导体的能带边缘的排列。被发现在电致发光研究中很有前途的系统将被制造成二极管和波导结构，并测试它们在这些应用中的适用性。本计划的主要目标是对稀土掺杂半导体材料的电子和光子性质以及外延生长和加工有一个基本的了解，以便利用它们来实现各种先进的电子和光子器件。该计划的一个重要特点是在材料和工艺研究的基础和技术方面对研究生和本科生进行培训。这项研究将有助于提高用于计算、信息处理和电信等领域的先进器件和集成电路的综合性能。***

9510139 Bray This collaborative, interdisciplinary research project focuses on the preparation and characterization of rare earth doped III-V semiconductors; these materials provide the potential of combining the convenience of electrical excitation offered by semiconductors with the temperature stable sharp line luminescence features of rare earth ions. The goal of MOVPE film growth studies is to identify the conditions necessary to obtain optimal concentrations of rare earth ions without dopant precipitation or degradation of materials quality or properties. Characterization studies will emphasize the relationship of the optical and electrical properties of the proposed systems to the growth process. Optical studies will include photoluminescence, electroluminescence, luminescence lifetime, luminescence excitation, absorption and near field scanning optical microscopy measurements. These studies seek to elucidate mechanisms of rare earth excitation and thermal quenching. High pressure studies will be conducted to study the effect of band structure on the luminescence properties of the proposed systems, and will also be used to determine the alignment of rare earth energy levels relative to the band edges of the proposed semiconductors. Systems found to be promising in electroluminescence studies will be fabricated into diode and waveguide structures and tested for their suitability in these applications. %%% The primary goal of this program is to develop a fundamental understanding of the electronic and photonic properties and the epitaxial growth and processing of rare-earth doped semiconductor materials so that they can be exploited in the realization of a variety of advanced electronic and photonic devices. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general performance of advanced devices and integr ated circuits used in computing, information processing, and telecommunications. ***