Electrical and Optical Characterization of Epitaxial Gallium-Arsenide and Related Materials Containing Controlled Concentrations of Oxygen and Boron

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Fundamental research on the effects of oxygen-related impurities in epitaxial InP and related systems will be conducted. Primary objectives include understanding the mechanism of deep level impurity incorporation, the microscopic nature of defect centers and deep levels produced by oxygen-related impurities, and the effects of oxygen-related impurities on electronic properties. The research emphasizes systematic studies of epitaxial samples containing a controlled deep level concentration. Targeted deep level concentrations ranging over several orders of magnitude will be incorporated into epitaxial InP and related systems via an MOVPE growth process. Characterization studies will emphasize high pressure electrical and optical measurements designed to elucidate the relationship of oxygen-related states to band structure, the magnitude of lattice relaxation effects associated with deep level introduction, and the stability of deep level charge states. %%% This research focuses on obtaining a fundamental understanding of the electrical and optical properties of InP based materials containing controlled amounts of selected impurities. The chemical identity and concentration of these impurities impart unique characteristics to InP based materials and will be used to produce materials possessing novel electrical and optical properties. Technologies based on computers, lasers, imaging, and communications systems will benefit from this research.