Electrical and Optical Characterization of Epitaxial Gallium-Arsenide and Related Materials Containing Controlled Concentrations of Oxygen and Boron

对氧相关杂质在外延InP及相关体系中的影响进行基础研究。主要目标包括了解深层杂质掺入的机制，氧相关杂质产生的缺陷中心和深层杂质的微观性质，以及氧相关杂质对电子性能的影响。本研究着重于系统地研究含有可控深层浓度的外延样品。目标深度浓度范围超过几个数量级将通过MOVPE生长过程纳入外延InP和相关系统。表征研究将强调高压电和光学测量，旨在阐明氧相关态与能带结构的关系，与深能级引入相关的晶格弛豫效应的大小，以及深能级电荷态的稳定性。本研究的重点是获得对含有一定量选定杂质的InP基材料的电学和光学性质的基本理解。这些杂质的化学特性和浓度赋予了InP基材料独特的特性，并将用于生产具有新型电学和光学特性的材料。基于计算机、激光、成像和通信系统的技术将受益于这项研究。

Fundamental research on the effects of oxygen-related impurities in epitaxial InP and related systems will be conducted. Primary objectives include understanding the mechanism of deep level impurity incorporation, the microscopic nature of defect centers and deep levels produced by oxygen-related impurities, and the effects of oxygen-related impurities on electronic properties. The research emphasizes systematic studies of epitaxial samples containing a controlled deep level concentration. Targeted deep level concentrations ranging over several orders of magnitude will be incorporated into epitaxial InP and related systems via an MOVPE growth process. Characterization studies will emphasize high pressure electrical and optical measurements designed to elucidate the relationship of oxygen-related states to band structure, the magnitude of lattice relaxation effects associated with deep level introduction, and the stability of deep level charge states. %%% This research focuses on obtaining a fundamental understanding of the electrical and optical properties of InP based materials containing controlled amounts of selected impurities. The chemical identity and concentration of these impurities impart unique characteristics to InP based materials and will be used to produce materials possessing novel electrical and optical properties. Technologies based on computers, lasers, imaging, and communications systems will benefit from this research.