Acquisition of an In-Situ Short-Wavelength Excimer-Laser Patterning System for Fabrication of Micro & Nanostructures in Molecular Beam Epitaxy

获取用于制造微结构的原位短波长准分子激光图案化系统

• 批准号: 9512560
• 负责人: Kayvan Sadra
• 金额: $ 16.95万
• 依托单位: University of Missouri-Columbia
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-09-01 至 1997-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9512560&HistoricalAwards=false
• 关键词: Acquisition; Situ; Short; Wavelength; Excimer

9512560 Sadra This proposal requests a laser-patterned system for the in-situ fabrication of III-V semiconductor devices. The system consists on an ArF/F2 excimer laser with patterning optics, etching chamber and hardware to couple with an existing molecular beam epitaxy (MBE) facility. The additional equipment will extend the PI's research program into promising areas, such as new devices and semiconductor fabrication equipment. The advanced device structures which might result from this effort are devices needing multiple regrowth operations. The ability to perform growth, patterning, etching and overgrowth in a reliable manner without removing the substrate from the vacuum would provide an important step forward in the use of MBE technology. ***

小行星9512560 该方案要求一种用于III-V族半导体器件的原位制造的激光图案化系统。 该系统由一个ArF/F2准分子激光器与图案化光学，蚀刻室和硬件耦合到现有的分子束外延（MBE）设施。 额外的设备将把PI的研究计划扩展到有前途的领域，例如新设备和半导体制造设备。 这种努力可能产生的先进器件结构是需要多次再生长操作的器件。 在不从真空中移除衬底的情况下以可靠的方式执行生长、图案化、蚀刻和过度生长的能力将在MBE技术的使用中向前迈出重要的一步。 ***