Low Energy Ion Scattering and Scanning Tunneling Microscope Studies of the Nucleation and Growth of Islands on Surfaces

低能离子散射和扫描隧道显微镜研究表面岛的成核和生长

• 批准号: 9521392
• 负责人: R. Stanley Williams
• 金额: $ 27万
• 依托单位: University of California-Los Angeles
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-07-01 至 1999-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9521392&HistoricalAwards=false
• 关键词: Low; Energy; Ion; Scattering; Scanning

9521392 Williams The phenomena of nucleation and growth of metals and metalloid islands (Ni, Ag, In, Sn, Sb, and Te), on semiconductor surfaces (Si) will be investigated. Techniques of Time-of Flight Low Energy Ion Scattering will be used to measure the coverage of the surface islands during material deposition to obtain kinetic information. Scanning Tunneling Microscopy (STM) will provide spatial information such as shape, size and densities of the islands, which can be related to thermodynamic properties of the system. The experimental data will be compared with computer simulations to determine growth mechanisms and physical parameters, especially surface diffusion constants and line tensions for different adsorbates. Materials with a broad range of properties and behaviors have been selected. STM will also provide information on the size dependence of the electronic property of the islands and the unique properties of supported clusters. %%% The ultimate objective in this research is to understand the kinetic and thermodynamic processes of nucleation and growth so that the formation of an optimized structure of dots, lines, and/or planes can be guided through control of deposition parameters such as flux, fluence and substrate temperature. The selected Materials have a broad range of properties and behaviors. Techniques of Time-of Flight Low Energy Ion Scattering will provide information on the coverage of the surface islands during material deposition to obtain kinetic information. Scanning Tunneling Microscopy (STM) will be used to study spatial information such as shape, size and densities of the islands, which can be related to thermodynamic properties of the system. The experimental data will be compared with computer simulations data to determine growth mechanisms and physical parameters, especially surface diffusion constants and line tensions for different adsorbates STM will also p rovide information on the size dependence of the electronic property of the islands and the unique properties of supported clusters. ***

9521392威廉姆斯将研究金属和类金属岛(镍、银、铟、锡、锑和碲)在半导体表面(Si)上的成核和生长现象。飞行时间低能离子散射技术将被用来测量材料沉积过程中表面岛屿的覆盖率，以获得动力学信息。扫描隧道显微镜(STM)将提供岛屿的形状、大小和密度等空间信息，这些信息可能与系统的热力学性质有关。实验数据将与计算机模拟进行比较，以确定生长机制和物理参数，特别是不同吸附物的表面扩散常数和线张力。选择了具有广泛性能和行为的材料。扫描隧道显微镜还将提供有关岛屿电子性质的大小依赖关系以及所支持的团簇的独特性质的信息。本研究的最终目标是了解成核和生长的动力学和热力学过程，以便通过控制沉积参数，如流量、流量和衬底温度，指导形成优化的点、线和/或面结构。选定的材料具有广泛的属性和行为。飞行时间低能离子散射技术将提供材料沉积过程中表面岛屿覆盖率的信息，以获得动力学信息。扫描隧道显微镜(STM)将被用来研究空间信息，如岛屿的形状、大小和密度，这些信息可能与系统的热力学性质有关。实验数据将与计算机模拟数据进行比较，以确定生长机制和物理参数，特别是不同吸附材料的表面扩散常数和线张力，STM还将提供有关岛屿电子性质的尺寸依赖关系和负载团簇的独特性质的信息。***